JPH0113209B2 - - Google Patents

Info

Publication number
JPH0113209B2
JPH0113209B2 JP55121567A JP12156780A JPH0113209B2 JP H0113209 B2 JPH0113209 B2 JP H0113209B2 JP 55121567 A JP55121567 A JP 55121567A JP 12156780 A JP12156780 A JP 12156780A JP H0113209 B2 JPH0113209 B2 JP H0113209B2
Authority
JP
Japan
Prior art keywords
single crystal
crystal layer
laser irradiation
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55121567A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745921A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121567A priority Critical patent/JPS5745921A/ja
Publication of JPS5745921A publication Critical patent/JPS5745921A/ja
Publication of JPH0113209B2 publication Critical patent/JPH0113209B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Recrystallisation Techniques (AREA)
JP55121567A 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation Granted JPS5745921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121567A JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121567A JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Publications (2)

Publication Number Publication Date
JPS5745921A JPS5745921A (en) 1982-03-16
JPH0113209B2 true JPH0113209B2 (OSRAM) 1989-03-03

Family

ID=14814423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121567A Granted JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Country Status (1)

Country Link
JP (1) JPS5745921A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPS6247115A (ja) * 1985-08-26 1987-02-28 Mitsubishi Electric Corp 半導体装置の製造方法
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JP2004055771A (ja) * 2002-07-18 2004-02-19 Nec Lcd Technologies Ltd 半導体薄膜の製造方法及びレーザ照射装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

Also Published As

Publication number Publication date
JPS5745921A (en) 1982-03-16

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