JPS5745921A - Forming method for semiconductor single crystal layer formed with laser irradiation - Google Patents

Forming method for semiconductor single crystal layer formed with laser irradiation

Info

Publication number
JPS5745921A
JPS5745921A JP12156780A JP12156780A JPS5745921A JP S5745921 A JPS5745921 A JP S5745921A JP 12156780 A JP12156780 A JP 12156780A JP 12156780 A JP12156780 A JP 12156780A JP S5745921 A JPS5745921 A JP S5745921A
Authority
JP
Japan
Prior art keywords
laser
layer
crystallized
single crystal
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12156780A
Other languages
Japanese (ja)
Other versions
JPH0113209B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12156780A priority Critical patent/JPS5745921A/en
Publication of JPS5745921A publication Critical patent/JPS5745921A/en
Publication of JPH0113209B2 publication Critical patent/JPH0113209B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a flat single crystal layer by first dividing laser irradiation into two stages, sequentially single-crystallizing a non-single crystalline layer to be single- crystallized with a laser having sufficient energy and then again melting and solidifying it with laser light covering over the entire surface when the non-single crystalline layer is accumulated on a support and is converted into single crystal by the emission of the laser. CONSTITUTION:A polycrystalline Si layer 3 to be single-crystallized is grown through an SiO2 film 2 on a wafer support 1 movable in vertical and horizontal directions is grown, and an Ar laser beam 4 is emitted from an Ar laser emitting device 10 through a totally reflecting prism or mirror 7 and a beam converging unit 9 to the layer 3. At this time the beam 4 has small emitting area but has large energy per unit area, and is scanned to melt the layer 3 with the film 2 as crystalline nucleus and is single-crystallized. Thereafter, to erase the wavy unevenness formed on the surface, the laser beam 6 from a ruby laser emitting device 5 is irradiated through the mirror 8 and the unit 9 to the entire surface, thereby flattening the overall surface.
JP12156780A 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation Granted JPS5745921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12156780A JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12156780A JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Publications (2)

Publication Number Publication Date
JPS5745921A true JPS5745921A (en) 1982-03-16
JPH0113209B2 JPH0113209B2 (en) 1989-03-03

Family

ID=14814423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12156780A Granted JPS5745921A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal layer formed with laser irradiation

Country Status (1)

Country Link
JP (1) JPS5745921A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247115A (en) * 1985-08-26 1987-02-28 Mitsubishi Electric Corp Manufacture of semiconductor device
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JP2004055771A (en) * 2002-07-18 2004-02-19 Nec Lcd Technologies Ltd Method for manufacturing semiconductor thin film and laser irradiation system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPS6247115A (en) * 1985-08-26 1987-02-28 Mitsubishi Electric Corp Manufacture of semiconductor device
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JP2004055771A (en) * 2002-07-18 2004-02-19 Nec Lcd Technologies Ltd Method for manufacturing semiconductor thin film and laser irradiation system

Also Published As

Publication number Publication date
JPH0113209B2 (en) 1989-03-03

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