JPS59134870A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59134870A JPS59134870A JP58007236A JP723683A JPS59134870A JP S59134870 A JPS59134870 A JP S59134870A JP 58007236 A JP58007236 A JP 58007236A JP 723683 A JP723683 A JP 723683A JP S59134870 A JPS59134870 A JP S59134870A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- conductivity type
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58007236A JPS59134870A (ja) | 1983-01-21 | 1983-01-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58007236A JPS59134870A (ja) | 1983-01-21 | 1983-01-21 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59134870A true JPS59134870A (ja) | 1984-08-02 |
JPH0470781B2 JPH0470781B2 (enrdf_load_stackoverflow) | 1992-11-11 |
Family
ID=11660357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58007236A Granted JPS59134870A (ja) | 1983-01-21 | 1983-01-21 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59134870A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5474367A (en) * | 1977-11-26 | 1979-06-14 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1983
- 1983-01-21 JP JP58007236A patent/JPS59134870A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5474367A (en) * | 1977-11-26 | 1979-06-14 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0470781B2 (enrdf_load_stackoverflow) | 1992-11-11 |
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