JPS6211511B2 - - Google Patents
Info
- Publication number
- JPS6211511B2 JPS6211511B2 JP53016987A JP1698778A JPS6211511B2 JP S6211511 B2 JPS6211511 B2 JP S6211511B2 JP 53016987 A JP53016987 A JP 53016987A JP 1698778 A JP1698778 A JP 1698778A JP S6211511 B2 JPS6211511 B2 JP S6211511B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- semiconductor
- transistor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1698778A JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1698778A JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54109384A JPS54109384A (en) | 1979-08-27 |
| JPS6211511B2 true JPS6211511B2 (enrdf_load_stackoverflow) | 1987-03-12 |
Family
ID=11931377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1698778A Granted JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109384A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162357A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit device |
-
1978
- 1978-02-15 JP JP1698778A patent/JPS54109384A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54109384A (en) | 1979-08-27 |
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