JPH0312471B2 - - Google Patents

Info

Publication number
JPH0312471B2
JPH0312471B2 JP58168745A JP16874583A JPH0312471B2 JP H0312471 B2 JPH0312471 B2 JP H0312471B2 JP 58168745 A JP58168745 A JP 58168745A JP 16874583 A JP16874583 A JP 16874583A JP H0312471 B2 JPH0312471 B2 JP H0312471B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
buried layer
well region
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58168745A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6059771A (ja
Inventor
Hiroshi Iwasaki
Shintaro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58168745A priority Critical patent/JPS6059771A/ja
Publication of JPS6059771A publication Critical patent/JPS6059771A/ja
Publication of JPH0312471B2 publication Critical patent/JPH0312471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58168745A 1983-09-13 1983-09-13 半導体装置およびその製造方法 Granted JPS6059771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168745A JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168745A JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6059771A JPS6059771A (ja) 1985-04-06
JPH0312471B2 true JPH0312471B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=15873625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168745A Granted JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6059771A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987850A (ja) * 1982-11-11 1984-05-21 Matsushita Electronics Corp 半導体装置
JPS59222957A (ja) * 1983-06-02 1984-12-14 Matsushita Electronics Corp 半導体装置

Also Published As

Publication number Publication date
JPS6059771A (ja) 1985-04-06

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