JPS6059771A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS6059771A
JPS6059771A JP58168745A JP16874583A JPS6059771A JP S6059771 A JPS6059771 A JP S6059771A JP 58168745 A JP58168745 A JP 58168745A JP 16874583 A JP16874583 A JP 16874583A JP S6059771 A JPS6059771 A JP S6059771A
Authority
JP
Japan
Prior art keywords
layer
conductivity type
buried layer
type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58168745A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312471B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwasaki
博 岩崎
Shintaro Ito
伊東　新太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58168745A priority Critical patent/JPS6059771A/ja
Publication of JPS6059771A publication Critical patent/JPS6059771A/ja
Publication of JPH0312471B2 publication Critical patent/JPH0312471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58168745A 1983-09-13 1983-09-13 半導体装置およびその製造方法 Granted JPS6059771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168745A JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168745A JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6059771A true JPS6059771A (ja) 1985-04-06
JPH0312471B2 JPH0312471B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=15873625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168745A Granted JPS6059771A (ja) 1983-09-13 1983-09-13 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6059771A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086006A (en) * 1984-12-11 1992-02-04 Seiko Epson Corporation Semiconductor device and method of production
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987850A (ja) * 1982-11-11 1984-05-21 Matsushita Electronics Corp 半導体装置
JPS59222957A (ja) * 1983-06-02 1984-12-14 Matsushita Electronics Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987850A (ja) * 1982-11-11 1984-05-21 Matsushita Electronics Corp 半導体装置
JPS59222957A (ja) * 1983-06-02 1984-12-14 Matsushita Electronics Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086006A (en) * 1984-12-11 1992-02-04 Seiko Epson Corporation Semiconductor device and method of production
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production

Also Published As

Publication number Publication date
JPH0312471B2 (enrdf_load_stackoverflow) 1991-02-20

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