JPS59132655A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS59132655A
JPS59132655A JP58007815A JP781583A JPS59132655A JP S59132655 A JPS59132655 A JP S59132655A JP 58007815 A JP58007815 A JP 58007815A JP 781583 A JP781583 A JP 781583A JP S59132655 A JPS59132655 A JP S59132655A
Authority
JP
Japan
Prior art keywords
signal
gate region
region
signal charge
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58007815A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035672B2 (enrdf_load_stackoverflow
Inventor
Masaru Yoshino
吉野　優
Mitsuo Nakayama
光雄 中山
Masato Yoneda
正人 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58007815A priority Critical patent/JPS59132655A/ja
Publication of JPS59132655A publication Critical patent/JPS59132655A/ja
Publication of JPH035672B2 publication Critical patent/JPH035672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58007815A 1983-01-19 1983-01-19 固体撮像装置 Granted JPS59132655A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58007815A JPS59132655A (ja) 1983-01-19 1983-01-19 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58007815A JPS59132655A (ja) 1983-01-19 1983-01-19 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59132655A true JPS59132655A (ja) 1984-07-30
JPH035672B2 JPH035672B2 (enrdf_load_stackoverflow) 1991-01-28

Family

ID=11676087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58007815A Granted JPS59132655A (ja) 1983-01-19 1983-01-19 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59132655A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132659A (ja) * 1983-01-20 1984-07-30 Matsushita Electric Ind Co Ltd 固体撮像装置
US6674470B1 (en) 1996-09-19 2004-01-06 Kabushiki Kaisha Toshiba MOS-type solid state imaging device with high sensitivity

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132659A (ja) * 1983-01-20 1984-07-30 Matsushita Electric Ind Co Ltd 固体撮像装置
US6674470B1 (en) 1996-09-19 2004-01-06 Kabushiki Kaisha Toshiba MOS-type solid state imaging device with high sensitivity

Also Published As

Publication number Publication date
JPH035672B2 (enrdf_load_stackoverflow) 1991-01-28

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