JPS59132623A - ドライエツチング用電極 - Google Patents

ドライエツチング用電極

Info

Publication number
JPS59132623A
JPS59132623A JP669383A JP669383A JPS59132623A JP S59132623 A JPS59132623 A JP S59132623A JP 669383 A JP669383 A JP 669383A JP 669383 A JP669383 A JP 669383A JP S59132623 A JPS59132623 A JP S59132623A
Authority
JP
Japan
Prior art keywords
wafer
electrode
etching
distribution
circumference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP669383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0437579B2 (enrdf_load_stackoverflow
Inventor
Masashi Kikuchi
正志 菊池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP669383A priority Critical patent/JPS59132623A/ja
Publication of JPS59132623A publication Critical patent/JPS59132623A/ja
Publication of JPH0437579B2 publication Critical patent/JPH0437579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP669383A 1983-01-20 1983-01-20 ドライエツチング用電極 Granted JPS59132623A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP669383A JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP669383A JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Publications (2)

Publication Number Publication Date
JPS59132623A true JPS59132623A (ja) 1984-07-30
JPH0437579B2 JPH0437579B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=11645419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP669383A Granted JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Country Status (1)

Country Link
JP (1) JPS59132623A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法
JPS6214430A (ja) * 1985-07-11 1987-01-23 Tokuda Seisakusho Ltd プラズマ処理装置
JPS62108527A (ja) * 1985-11-06 1987-05-19 Anelva Corp ドライエツチング装置
JPS63177520A (ja) * 1987-01-19 1988-07-21 Matsushita Electric Ind Co Ltd ドライエッチング方法
JP2001527285A (ja) * 1997-12-19 2001-12-25 ラム リサーチ コーポレーション フォーカスリングおよびそのための方法
JP2002517913A (ja) * 1998-06-10 2002-06-18 ラム リサーチ コーポレーション イオンエネルギの低減
JP2010525612A (ja) * 2007-04-27 2010-07-22 アプライド マテリアルズ インコーポレイテッド 環状のバッフル
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP2023532276A (ja) * 2020-06-25 2023-07-27 ラム リサーチ コーポレーション プラズマインピーダンスが半径方向に変化するキャリアリング
US12400902B2 (en) 2020-02-11 2025-08-26 Lam Research Corporation Carrier ring designs for controlling deposition on wafer bevel/edge

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法
JPS6214430A (ja) * 1985-07-11 1987-01-23 Tokuda Seisakusho Ltd プラズマ処理装置
JPS62108527A (ja) * 1985-11-06 1987-05-19 Anelva Corp ドライエツチング装置
JPS63177520A (ja) * 1987-01-19 1988-07-21 Matsushita Electric Ind Co Ltd ドライエッチング方法
JP2001527285A (ja) * 1997-12-19 2001-12-25 ラム リサーチ コーポレーション フォーカスリングおよびそのための方法
JP4933692B2 (ja) * 1998-06-10 2012-05-16 ラム リサーチ コーポレーション イオンエネルギの低減
JP2002517913A (ja) * 1998-06-10 2002-06-18 ラム リサーチ コーポレーション イオンエネルギの低減
JP2010525612A (ja) * 2007-04-27 2010-07-22 アプライド マテリアルズ インコーポレイテッド 環状のバッフル
US8647438B2 (en) 2007-04-27 2014-02-11 Applied Materials, Inc. Annular baffle
US10012248B2 (en) 2007-04-27 2018-07-03 Applied Materials, Inc. Annular baffle
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
US12400902B2 (en) 2020-02-11 2025-08-26 Lam Research Corporation Carrier ring designs for controlling deposition on wafer bevel/edge
JP2023532276A (ja) * 2020-06-25 2023-07-27 ラム リサーチ コーポレーション プラズマインピーダンスが半径方向に変化するキャリアリング

Also Published As

Publication number Publication date
JPH0437579B2 (enrdf_load_stackoverflow) 1992-06-19

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