JP2010525612A - 環状のバッフル - Google Patents
環状のバッフル Download PDFInfo
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- JP2010525612A JP2010525612A JP2010506496A JP2010506496A JP2010525612A JP 2010525612 A JP2010525612 A JP 2010525612A JP 2010506496 A JP2010506496 A JP 2010506496A JP 2010506496 A JP2010506496 A JP 2010506496A JP 2010525612 A JP2010525612 A JP 2010525612A
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- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- F15D—FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENCING THE FLOW OF GASES OR LIQUIDS
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
Description
本発明の実施形態は、概ね、エッチングチャンバ内でプラズマを閉じ込めるためのバッフルアセンブリに関する。
(関連技術の説明)
別の実施形態において、エッチングチャンバーのバッフルアセンブリに用いられるリングが開示される。このリングは第1の直径まで延びるトップウォールと、この第1の直径より大きい第2の直径を有する外側のウォールと、前記トップウォールと前記外側のウォールとの間に形成される第2のウォールとを含む。第2のウォールは、第1の直径のところのトップウォールから、第2の直径のところの外側ウォールへと湾曲する。
Claims (15)
- リングと、
このリングに接続されたベース部分を含み、
前記ベース部分は、
第1の直径を有するフランジと、
前記第1の直径より小さい直径を有する下側のフレーム部分と、
前記フランジと前記下側のフレーム部分との間に形成された第1のウォールとを含み、
前記第1のウォールは前記下側のフレーム部分から前記フランジへと湾曲しているバッフルアセンブリ。 - 前記リングはシリコンを含み、前記ベース部分はアルミニウムを含む請求項1記載のアセンブリ。
- 前記ベース部分はさらに、前記第1のウォールから内側に放射状に設けられたレッジを含む請求項1記載のアセンブリ。
- 前記リングと前記ベース部分との間に設けられた1又はそれ以上のスペーサーと、
前記ベース部分に結合された加熱アセンブリとを含む請求項1記載のアセンブリ。 - 前記リングは、
第3の直径まで延びるトップウォールと、
前記第3の直径より大きい第4の直径を有する外側のウォールと、
前記トップウォールと前記外側ウォールとの間に形成された第2のウォールとを含み、
前記第2のウォールは前記第3の直径のところの前記トップウォールから、前記第4の直径のところの前記外側のウォールへと湾曲し、
前記第4の直径は前記第1の直径とほぼ等しい請求項1記載のアセンブリ。 - 前記ベース部分は、更に、
前記第2の直径より大きく、前記第1の直径よりは小さい、第3の直径を有するボトムウォールと、
前記第3の直径と前記第1の直径との間で湾曲する第2のウォールとを含む請求項1記載のアセンブリ。 - 第1の直径を有するフランジと、
前記第1の直径より小さい第2の直径を有する下側のフレーム部分と、
前記フランジと前記下側フレーム部分との間に形成される第1のウォールを含み、
前記第1のウォールは前記下側フレーム部分から前記フランジへと湾曲するバッフルのベース部分。 - 前記第1のウォールから内側に放射状に設けられたレッジと、
加熱アセンブリと、
前記第2の直径より大きく、前記第1の直径より小さい第3の直径を有するボトムウォールと、
前記第3の直径と前記第1の直径との間で湾曲する第2のウォールを含み、
前記フランジ、下側フレーム部分、第1のウォール、レッジ、ボトムウォール、及び第2のウォールはアルミニウムを含む請求項7記載のベース部分。 - リングと、
前記リングに結合されるベース部分を含み、
前記ベース部分は、
第1の直径を有するフランジと、
前記第1の直径より小さい第2の直径を有する下側フレーム部分と、
前記フランジを支持するための支持部分と、
加熱アセンブリとを含むバッフルアセンブリ。 - 前記リングはシリコンを含み、前記ベース部分はアルミニウムを含む請求項9記載のアセンブリ。
- 前記リングと前記ベース部分との間に設けられた1つ以上のスペーサーを更に含む請求項9記載のアセンブリ。
- 前記リングは更に、
第3の直径まで延びるトップウォールと、
前記第3の直径より大きい第4の直径を有する外側ウォールと、
前記トップウォールと前記外側ウォールとの間に形成される第2のウォールとを含み、
前記第2のウォールは、前記第3の直径のところの前記トップウォールから、前記第4の直径のところの前記外側のウォールへと湾曲し、
前記第4の直径は前記第1の直径にほぼ等しい請求項9記載のアセンブリ。 - 前記ベース部分は更に、
前記第1のウォールから放射状に設けられたレッジと、
前記第2の直径より大きく、前記1の直径より小さい第3の直径を有するボトムウォールと、
前記第3の直径と前記第1の直径との間で湾曲する第2のウォールとを含む請求項9記載のアセンブリ。 - 前記支持部分は段差のある部分を含む請求項9記載のアセンブリ。
- 前記支持部分は湾曲したウォールを含む請求項9記載のアセンブリ。
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Application Number | Priority Date | Filing Date | Title |
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US91458307P | 2007-04-27 | 2007-04-27 | |
US60/914,583 | 2007-04-27 | ||
PCT/US2008/061448 WO2008134446A1 (en) | 2007-04-27 | 2008-04-24 | Annular baffle |
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JP2018219830A Pending JP2019054274A (ja) | 2007-04-27 | 2018-11-25 | 環状のバッフル |
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US9095038B2 (en) | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
CN102395243A (zh) * | 2011-10-19 | 2012-03-28 | 中微半导体设备(上海)有限公司 | 改进等离子均匀性和效率的电感耦合等离子装置 |
CN103796413B (zh) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | 等离子反应器及制作半导体基片的方法 |
CN102355792B (zh) * | 2011-10-19 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 改进等离子均匀性和效率的电感耦合等离子装置 |
CN103874314B (zh) * | 2012-12-17 | 2016-10-05 | 中微半导体设备(上海)有限公司 | 一种电感耦合等离子装置 |
US20160219702A1 (en) | 2015-01-23 | 2016-07-28 | Gholamreza Chaji | Selective micro device transfer to receiver substrate |
US10700120B2 (en) | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
US20170215280A1 (en) | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
KR20220027091A (ko) * | 2019-06-07 | 2022-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 심리스 전기 도관 |
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- 2008-04-24 KR KR1020097024312A patent/KR101480738B1/ko active IP Right Grant
- 2008-04-24 CN CN200880012922A patent/CN101663421A/zh active Pending
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Publication number | Publication date |
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JP6442463B2 (ja) | 2018-12-19 |
JP6097471B2 (ja) | 2017-03-15 |
US20140130926A1 (en) | 2014-05-15 |
US20160341227A1 (en) | 2016-11-24 |
US20080314571A1 (en) | 2008-12-25 |
SG10201703432XA (en) | 2017-06-29 |
KR101480738B1 (ko) | 2015-01-09 |
CN101663421A (zh) | 2010-03-03 |
JP2017085111A (ja) | 2017-05-18 |
WO2008134446A1 (en) | 2008-11-06 |
TWI527116B (zh) | 2016-03-21 |
US8647438B2 (en) | 2014-02-11 |
JP2019054274A (ja) | 2019-04-04 |
TWI443738B (zh) | 2014-07-01 |
US10012248B2 (en) | 2018-07-03 |
KR20100017240A (ko) | 2010-02-16 |
TW201440142A (zh) | 2014-10-16 |
TW200908137A (en) | 2009-02-16 |
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