JPS59126648A - ペレツト剥離方法 - Google Patents

ペレツト剥離方法

Info

Publication number
JPS59126648A
JPS59126648A JP58001507A JP150783A JPS59126648A JP S59126648 A JPS59126648 A JP S59126648A JP 58001507 A JP58001507 A JP 58001507A JP 150783 A JP150783 A JP 150783A JP S59126648 A JPS59126648 A JP S59126648A
Authority
JP
Japan
Prior art keywords
pellets
adhesive tape
pellet
tape
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58001507A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244409B2 (enExample
Inventor
Koichi Tanigawa
谷川　耕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP58001507A priority Critical patent/JPS59126648A/ja
Publication of JPS59126648A publication Critical patent/JPS59126648A/ja
Publication of JPS6244409B2 publication Critical patent/JPS6244409B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP58001507A 1983-01-07 1983-01-07 ペレツト剥離方法 Granted JPS59126648A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58001507A JPS59126648A (ja) 1983-01-07 1983-01-07 ペレツト剥離方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58001507A JPS59126648A (ja) 1983-01-07 1983-01-07 ペレツト剥離方法

Publications (2)

Publication Number Publication Date
JPS59126648A true JPS59126648A (ja) 1984-07-21
JPS6244409B2 JPS6244409B2 (enExample) 1987-09-21

Family

ID=11503388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58001507A Granted JPS59126648A (ja) 1983-01-07 1983-01-07 ペレツト剥離方法

Country Status (1)

Country Link
JP (1) JPS59126648A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (ja) * 1983-07-29 1985-02-18 関西日本電気株式会社 半導体ウエ−ハダイシング用接着シ−ト
JPS62189111A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS62189110A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS62189112A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS6392038A (ja) * 1986-10-06 1988-04-22 Matsushita Electric Ind Co Ltd チツプ供給方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185981A (ja) * 1988-01-21 1989-07-25 Fuji Electric Co Ltd 極低温容器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (ja) * 1983-07-29 1985-02-18 関西日本電気株式会社 半導体ウエ−ハダイシング用接着シ−ト
JPS62189111A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS62189110A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS62189112A (ja) * 1986-02-17 1987-08-18 ウシオ電機株式会社 粘着シ−ト処理装置
JPS6392038A (ja) * 1986-10-06 1988-04-22 Matsushita Electric Ind Co Ltd チツプ供給方法

Also Published As

Publication number Publication date
JPS6244409B2 (enExample) 1987-09-21

Similar Documents

Publication Publication Date Title
US5476566A (en) Method for thinning a semiconductor wafer
US3562057A (en) Method for separating substrates
DE102013212440B4 (de) Harzversiegelungsverfahren für Halbleiterchips
JPS6317981A (ja) 粘着シ−ト
JPS59126648A (ja) ペレツト剥離方法
KR20170008756A (ko) 다이본드 다이싱 시트
JP2003338474A (ja) 脆質部材の加工方法
US3755048A (en) Apparatus for use in semiconductor cleaning and transferring processes
CN108864975B (zh) 一种脱胶方法
JPH08288318A (ja) ピックアップ方法および装置
JP3029891B2 (ja) 耐熱カバーテープ
JPH03239346A (ja) 半導体装置の製造方法
CN106229286A (zh) 薄工件临时键合的加工方法
US2184077A (en) Decalcomania transfer
JPH04249343A (ja) 基板分断方法
CN207891298U (zh) 热硬化型复合胶带
CN206204209U (zh) 胶带
JPS63211644A (ja) 半導体ペレットの製造方法
JPS63193981A (ja) ウエハ貼着用粘着シ−ト
JPH0697211A (ja) 半導体装置の製造方法
US2155931A (en) Method of applying an aircraft covering
JPS6186248A (ja) ダイシングフイルム
JPH0442557A (ja) チップ状部品のピックアップ装置
JPS62152814A (ja) 半導体ウエハのダイシング方法
US3445268A (en) Laminar sheet material for making negative transparencies