JPS59123283A - 光電変換装置 - Google Patents

光電変換装置

Info

Publication number
JPS59123283A
JPS59123283A JP57230767A JP23076782A JPS59123283A JP S59123283 A JPS59123283 A JP S59123283A JP 57230767 A JP57230767 A JP 57230767A JP 23076782 A JP23076782 A JP 23076782A JP S59123283 A JPS59123283 A JP S59123283A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion device
semiconductor
light
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57230767A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0432553B2 (OSRAM
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57230767A priority Critical patent/JPS59123283A/ja
Publication of JPS59123283A publication Critical patent/JPS59123283A/ja
Publication of JPH0432553B2 publication Critical patent/JPH0432553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)
JP57230767A 1982-12-28 1982-12-28 光電変換装置 Granted JPS59123283A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230767A JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230767A JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Publications (2)

Publication Number Publication Date
JPS59123283A true JPS59123283A (ja) 1984-07-17
JPH0432553B2 JPH0432553B2 (OSRAM) 1992-05-29

Family

ID=16912938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230767A Granted JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Country Status (1)

Country Link
JP (1) JPS59123283A (OSRAM)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644091A (en) * 1983-08-29 1987-02-17 Taiyo Yuden Kabushiki Kaisha Photoelectric transducer
JPS6288927A (ja) * 1985-10-16 1987-04-23 Sanyo Electric Co Ltd 色センサ
FR2596753A1 (fr) * 1986-04-08 1987-10-09 Glaverbel Verre mate, procede de fabrication de verre mate, cellule photovoltaique comprenant un tel verre et procede de fabrication d'une telle cellule
JPS6381986A (ja) * 1986-09-26 1988-04-12 Anelva Corp 光電変換素子
WO1998043304A1 (en) * 1997-03-21 1998-10-01 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JP2005510884A (ja) * 2001-11-29 2005-04-21 オリジン エナジー ソーラー ピーティーワイ リミテッド 半導体テクスチャ化プロセス
JP2009070933A (ja) * 2007-09-12 2009-04-02 Oji Paper Co Ltd 単粒子膜エッチングマスクを有する表面微細凹凸構造体形成用基板とその製法及び表面微細凹凸構造体
JP2009224427A (ja) * 2008-03-14 2009-10-01 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
JP2009231500A (ja) * 2008-03-21 2009-10-08 Mitsubishi Electric Corp 太陽電池用基板とその製造方法および太陽電池の製造方法
JP2011014937A (ja) * 2010-10-18 2011-01-20 Mitsubishi Electric Corp 太陽電池用基板の製造方法および太陽電池の製造方法
JP2014075416A (ja) * 2012-10-03 2014-04-24 Tokyo Institute Of Technology 薄膜太陽電池およびその製造方法
JP2016531426A (ja) * 2013-07-24 2016-10-06 リラス ゲーエムベーハーＬｉｌａｓ Ｇｍｂｈ 太陽電池セル、特にシリコン薄膜太陽電池セルを製造するための方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55152071U (OSRAM) * 1979-04-18 1980-11-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55152071U (OSRAM) * 1979-04-18 1980-11-01

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644091A (en) * 1983-08-29 1987-02-17 Taiyo Yuden Kabushiki Kaisha Photoelectric transducer
JPS6288927A (ja) * 1985-10-16 1987-04-23 Sanyo Electric Co Ltd 色センサ
FR2596753A1 (fr) * 1986-04-08 1987-10-09 Glaverbel Verre mate, procede de fabrication de verre mate, cellule photovoltaique comprenant un tel verre et procede de fabrication d'une telle cellule
BE1001108A4 (fr) * 1986-04-08 1989-07-18 Glaverbel Verre mate, procede de fabrication de verre mate, cellule photovoltaique comprenant un tel verre et procede de fabrication d'une telle cellule.
JPS6381986A (ja) * 1986-09-26 1988-04-12 Anelva Corp 光電変換素子
WO1998043304A1 (en) * 1997-03-21 1998-10-01 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
US6207890B1 (en) 1997-03-21 2001-03-27 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
US6380479B2 (en) 1997-03-21 2002-04-30 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JP2005510884A (ja) * 2001-11-29 2005-04-21 オリジン エナジー ソーラー ピーティーワイ リミテッド 半導体テクスチャ化プロセス
US7828983B2 (en) 2001-11-29 2010-11-09 Transform Solar Pty Ltd Semiconductor texturing process
JP2009070933A (ja) * 2007-09-12 2009-04-02 Oji Paper Co Ltd 単粒子膜エッチングマスクを有する表面微細凹凸構造体形成用基板とその製法及び表面微細凹凸構造体
JP2009224427A (ja) * 2008-03-14 2009-10-01 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
JP2009231500A (ja) * 2008-03-21 2009-10-08 Mitsubishi Electric Corp 太陽電池用基板とその製造方法および太陽電池の製造方法
JP2011014937A (ja) * 2010-10-18 2011-01-20 Mitsubishi Electric Corp 太陽電池用基板の製造方法および太陽電池の製造方法
JP2014075416A (ja) * 2012-10-03 2014-04-24 Tokyo Institute Of Technology 薄膜太陽電池およびその製造方法
JP2016531426A (ja) * 2013-07-24 2016-10-06 リラス ゲーエムベーハーＬｉｌａｓ Ｇｍｂｈ 太陽電池セル、特にシリコン薄膜太陽電池セルを製造するための方法

Also Published As

Publication number Publication date
JPH0432553B2 (OSRAM) 1992-05-29

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