JPH0432553B2 - - Google Patents

Info

Publication number
JPH0432553B2
JPH0432553B2 JP57230767A JP23076782A JPH0432553B2 JP H0432553 B2 JPH0432553 B2 JP H0432553B2 JP 57230767 A JP57230767 A JP 57230767A JP 23076782 A JP23076782 A JP 23076782A JP H0432553 B2 JPH0432553 B2 JP H0432553B2
Authority
JP
Japan
Prior art keywords
substrate
light
semiconductor
ctf
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57230767A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123283A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57230767A priority Critical patent/JPS59123283A/ja
Publication of JPS59123283A publication Critical patent/JPS59123283A/ja
Publication of JPH0432553B2 publication Critical patent/JPH0432553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)
JP57230767A 1982-12-28 1982-12-28 光電変換装置 Granted JPS59123283A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230767A JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230767A JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Publications (2)

Publication Number Publication Date
JPS59123283A JPS59123283A (ja) 1984-07-17
JPH0432553B2 true JPH0432553B2 (OSRAM) 1992-05-29

Family

ID=16912938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230767A Granted JPS59123283A (ja) 1982-12-28 1982-12-28 光電変換装置

Country Status (1)

Country Link
JP (1) JPS59123283A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680837B2 (ja) * 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
JPH0663829B2 (ja) * 1985-10-16 1994-08-22 三洋電機株式会社 色センサ
GB2188924B (en) * 1986-04-08 1990-05-09 Glaverbel Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell
JPS6381986A (ja) * 1986-09-26 1988-04-12 Anelva Corp 光電変換素子
DE69811511T2 (de) 1997-03-21 2004-02-19 Sanyo Electric Co., Ltd., Moriguchi Herstellungsverfahren für ein photovoltaisches bauelement
CN1613155B (zh) * 2001-11-29 2010-05-05 源太阳能股份有限公司 半导体结构化工艺
JP2009070933A (ja) * 2007-09-12 2009-04-02 Oji Paper Co Ltd 単粒子膜エッチングマスクを有する表面微細凹凸構造体形成用基板とその製法及び表面微細凹凸構造体
JP4684306B2 (ja) * 2008-03-14 2011-05-18 三菱電機株式会社 薄膜太陽電池の製造方法
JP2009231500A (ja) * 2008-03-21 2009-10-08 Mitsubishi Electric Corp 太陽電池用基板とその製造方法および太陽電池の製造方法
JP5312427B2 (ja) * 2010-10-18 2013-10-09 三菱電機株式会社 太陽電池用基板の製造方法および太陽電池の製造方法
JP5934073B2 (ja) * 2012-10-03 2016-06-15 ナショナル サイエンス アンド テクノロジー ディベロップメント エイジェンシーＮａｔｉｏｎａｌ Ｓｃｉｅｎｃｅ ａｎｄ Ｔｅｃｈｎｏｌｏｇｙ Ｄｅｖｅｌｏｐｍｅｎｔ Ａｇｅｎｃｙ 薄膜太陽電池およびその製造方法
DE102013107910A1 (de) * 2013-07-24 2015-01-29 Lilas Gmbh Verfahren zur Herstellung einer Solarzelle, insbesondere einer Silizium-Dünnschicht-Solarzelle

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55152071U (OSRAM) * 1979-04-18 1980-11-01

Also Published As

Publication number Publication date
JPS59123283A (ja) 1984-07-17

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