JPS59121851A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59121851A JPS59121851A JP57227297A JP22729782A JPS59121851A JP S59121851 A JPS59121851 A JP S59121851A JP 57227297 A JP57227297 A JP 57227297A JP 22729782 A JP22729782 A JP 22729782A JP S59121851 A JPS59121851 A JP S59121851A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- grid line
- metal
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 31
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 28
- 239000000758 substrate Substances 0.000 abstract description 27
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 3
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 10
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227297A JPS59121851A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227297A JPS59121851A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121851A true JPS59121851A (ja) | 1984-07-14 |
| JPH0342505B2 JPH0342505B2 (enrdf_load_stackoverflow) | 1991-06-27 |
Family
ID=16858602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57227297A Granted JPS59121851A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121851A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03129855A (ja) * | 1989-10-16 | 1991-06-03 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH0438053U (enrdf_load_stackoverflow) * | 1990-07-26 | 1992-03-31 | ||
| JP2009239149A (ja) * | 2008-03-28 | 2009-10-15 | Nec Electronics Corp | 半導体ウエハ、半導体チップ、半導体装置、及び半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5779646A (en) * | 1980-11-05 | 1982-05-18 | Nec Corp | Semiconductor wafer |
| JPS57164546A (en) * | 1981-04-03 | 1982-10-09 | Oki Electric Ind Co Ltd | Semiconductor device |
-
1982
- 1982-12-28 JP JP57227297A patent/JPS59121851A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5779646A (en) * | 1980-11-05 | 1982-05-18 | Nec Corp | Semiconductor wafer |
| JPS57164546A (en) * | 1981-04-03 | 1982-10-09 | Oki Electric Ind Co Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03129855A (ja) * | 1989-10-16 | 1991-06-03 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH0438053U (enrdf_load_stackoverflow) * | 1990-07-26 | 1992-03-31 | ||
| JP2009239149A (ja) * | 2008-03-28 | 2009-10-15 | Nec Electronics Corp | 半導体ウエハ、半導体チップ、半導体装置、及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0342505B2 (enrdf_load_stackoverflow) | 1991-06-27 |
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