JPH0342505B2 - - Google Patents

Info

Publication number
JPH0342505B2
JPH0342505B2 JP57227297A JP22729782A JPH0342505B2 JP H0342505 B2 JPH0342505 B2 JP H0342505B2 JP 57227297 A JP57227297 A JP 57227297A JP 22729782 A JP22729782 A JP 22729782A JP H0342505 B2 JPH0342505 B2 JP H0342505B2
Authority
JP
Japan
Prior art keywords
grid line
oxide film
semiconductor device
silicide layer
platinum silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57227297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59121851A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57227297A priority Critical patent/JPS59121851A/ja
Publication of JPS59121851A publication Critical patent/JPS59121851A/ja
Publication of JPH0342505B2 publication Critical patent/JPH0342505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
JP57227297A 1982-12-28 1982-12-28 半導体装置の製造方法 Granted JPS59121851A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57227297A JPS59121851A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57227297A JPS59121851A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59121851A JPS59121851A (ja) 1984-07-14
JPH0342505B2 true JPH0342505B2 (enrdf_load_stackoverflow) 1991-06-27

Family

ID=16858602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57227297A Granted JPS59121851A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59121851A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2777426B2 (ja) * 1989-10-16 1998-07-16 三洋電機株式会社 半導体装置の製造方法
JPH0438053U (enrdf_load_stackoverflow) * 1990-07-26 1992-03-31
JP5173525B2 (ja) * 2008-03-28 2013-04-03 ルネサスエレクトロニクス株式会社 半導体ウエハ、半導体チップ、半導体装置、及び半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779646A (en) * 1980-11-05 1982-05-18 Nec Corp Semiconductor wafer
JPS57164546A (en) * 1981-04-03 1982-10-09 Oki Electric Ind Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS59121851A (ja) 1984-07-14

Similar Documents

Publication Publication Date Title
EP0039174B1 (en) Gold metallisation in semiconductor devices
JPH03129855A (ja) 半導体装置の製造方法
JPH02270342A (ja) 半導体装置の製造方法
JPS6364057B2 (enrdf_load_stackoverflow)
JPH0342505B2 (enrdf_load_stackoverflow)
JPH0143458B2 (enrdf_load_stackoverflow)
JPH08172062A (ja) 半導体ウエハ及び半導体ウエハの製造方法
JP2001044141A (ja) 半導体基板の切断方法
JPH03198342A (ja) 半導体装置の製造方法
US3860461A (en) Method for fabricating semiconductor devices utilizing composite masking
DE3344462C2 (enrdf_load_stackoverflow)
JP3116469B2 (ja) バンプ型電極の形成方法及び半導体装置の製造方法
JP2513455B2 (ja) 半導体装置の製造方法
JPS62122173A (ja) 半導体装置
KR100220243B1 (ko) 반도체 소자의 본딩 패드 형성방법
JPH0567620A (ja) バンプ形成方法
JPS58177B2 (ja) 半導体装置の製造法
JPS5832434A (ja) 半導体装置の製造方法
JPS61224415A (ja) 半導体装置の製造方法
JPH05175155A (ja) 半導体集積回路装置のグリッドライン製造方法
JPH0713958B2 (ja) 半導体装置の製造方法
JPS61240679A (ja) シヨツトキ−バリヤ型半導体装置およびその製造方法
JPH04264733A (ja) 集積回路装置のバンプ電極用下地膜の形成方法
JPS5885549A (ja) 半導体装置の製造方法
JPS6214425A (ja) 半導体装置の製造方法