JPS59119045U - 高出力高周波トランジスタ - Google Patents

高出力高周波トランジスタ

Info

Publication number
JPS59119045U
JPS59119045U JP1255383U JP1255383U JPS59119045U JP S59119045 U JPS59119045 U JP S59119045U JP 1255383 U JP1255383 U JP 1255383U JP 1255383 U JP1255383 U JP 1255383U JP S59119045 U JPS59119045 U JP S59119045U
Authority
JP
Japan
Prior art keywords
region
drain
deposited layer
frequency transistor
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1255383U
Other languages
English (en)
Japanese (ja)
Other versions
JPH051083Y2 (US06272168-20010807-M00014.png
Inventor
滝野　孝則
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to JP1255383U priority Critical patent/JPS59119045U/ja
Publication of JPS59119045U publication Critical patent/JPS59119045U/ja
Application granted granted Critical
Publication of JPH051083Y2 publication Critical patent/JPH051083Y2/ja
Granted legal-status Critical Current

Links

JP1255383U 1983-01-28 1983-01-28 高出力高周波トランジスタ Granted JPS59119045U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1255383U JPS59119045U (ja) 1983-01-28 1983-01-28 高出力高周波トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1255383U JPS59119045U (ja) 1983-01-28 1983-01-28 高出力高周波トランジスタ

Publications (2)

Publication Number Publication Date
JPS59119045U true JPS59119045U (ja) 1984-08-11
JPH051083Y2 JPH051083Y2 (US06272168-20010807-M00014.png) 1993-01-12

Family

ID=30143954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1255383U Granted JPS59119045U (ja) 1983-01-28 1983-01-28 高出力高周波トランジスタ

Country Status (1)

Country Link
JP (1) JPS59119045U (US06272168-20010807-M00014.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218957A (ja) * 1990-03-05 1992-08-10 Fujitsu Ltd 高耐圧ｍｏｓトランジスタ及びその製造方法、及び半導体装置及びその製造方法
JPH0669502A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp Ｍｉｓ型高耐圧トランジスタ
WO2007063908A1 (ja) * 2005-11-29 2007-06-07 Sharp Kabushiki Kaisha 半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49100979A (US06272168-20010807-M00014.png) * 1973-01-31 1974-09-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49100979A (US06272168-20010807-M00014.png) * 1973-01-31 1974-09-24

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218957A (ja) * 1990-03-05 1992-08-10 Fujitsu Ltd 高耐圧ｍｏｓトランジスタ及びその製造方法、及び半導体装置及びその製造方法
JPH0669502A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp Ｍｉｓ型高耐圧トランジスタ
WO2007063908A1 (ja) * 2005-11-29 2007-06-07 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
JP5028272B2 (ja) * 2005-11-29 2012-09-19 シャープ株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH051083Y2 (US06272168-20010807-M00014.png) 1993-01-12

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