JPS59116986A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS59116986A
JPS59116986A JP57232503A JP23250382A JPS59116986A JP S59116986 A JPS59116986 A JP S59116986A JP 57232503 A JP57232503 A JP 57232503A JP 23250382 A JP23250382 A JP 23250382A JP S59116986 A JPS59116986 A JP S59116986A
Authority
JP
Japan
Prior art keywords
bit line
power supply
transistor
potential
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57232503A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226114B2 (enrdf_load_stackoverflow
Inventor
Junichi Miyamoto
順一 宮本
Shinji Saito
伸二 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57232503A priority Critical patent/JPS59116986A/ja
Publication of JPS59116986A publication Critical patent/JPS59116986A/ja
Publication of JPS6226114B2 publication Critical patent/JPS6226114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57232503A 1982-12-23 1982-12-23 半導体記憶装置 Granted JPS59116986A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57232503A JPS59116986A (ja) 1982-12-23 1982-12-23 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232503A JPS59116986A (ja) 1982-12-23 1982-12-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59116986A true JPS59116986A (ja) 1984-07-06
JPS6226114B2 JPS6226114B2 (enrdf_load_stackoverflow) 1987-06-06

Family

ID=16940342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232503A Granted JPS59116986A (ja) 1982-12-23 1982-12-23 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59116986A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61233499A (ja) * 1985-04-04 1986-10-17 アメリカン・マイクロシステムズ・インコ−ポレイテツド 基準電圧発生回路及びその制御方法
JPS62212996A (ja) * 1986-03-03 1987-09-18 モトロ−ラ・インコ−ポレ−テツド メモリのビツト・ライン等化装置
JPH01211394A (ja) * 1988-02-19 1989-08-24 Sony Corp メモリ装置
JPH02302993A (ja) * 1989-05-02 1990-12-14 Samsung Electron Co Ltd 電源電圧追跡回路及びそれを適用したランダムアクセスメモリ装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61233499A (ja) * 1985-04-04 1986-10-17 アメリカン・マイクロシステムズ・インコ−ポレイテツド 基準電圧発生回路及びその制御方法
JPS62212996A (ja) * 1986-03-03 1987-09-18 モトロ−ラ・インコ−ポレ−テツド メモリのビツト・ライン等化装置
JPH01211394A (ja) * 1988-02-19 1989-08-24 Sony Corp メモリ装置
JPH02302993A (ja) * 1989-05-02 1990-12-14 Samsung Electron Co Ltd 電源電圧追跡回路及びそれを適用したランダムアクセスメモリ装置

Also Published As

Publication number Publication date
JPS6226114B2 (enrdf_load_stackoverflow) 1987-06-06

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