JPS59107524A - 半導体素子の層間絶縁膜形成方法 - Google Patents

半導体素子の層間絶縁膜形成方法

Info

Publication number
JPS59107524A
JPS59107524A JP58229293A JP22929383A JPS59107524A JP S59107524 A JPS59107524 A JP S59107524A JP 58229293 A JP58229293 A JP 58229293A JP 22929383 A JP22929383 A JP 22929383A JP S59107524 A JPS59107524 A JP S59107524A
Authority
JP
Japan
Prior art keywords
insulating film
solution
polyimide
interlayer insulating
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58229293A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0259619B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazumasa Igarashi
一雅 五十嵐
Katsuhiko Yamaguchi
勝彦 山口
Kazuo Iko
伊香　和夫
Kazuyuki Miki
三木　和幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Electric Industrial Co Ltd filed Critical Nitto Electric Industrial Co Ltd
Priority to JP58229293A priority Critical patent/JPS59107524A/ja
Publication of JPS59107524A publication Critical patent/JPS59107524A/ja
Publication of JPH0259619B2 publication Critical patent/JPH0259619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Silicon Polymers (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP58229293A 1983-12-05 1983-12-05 半導体素子の層間絶縁膜形成方法 Granted JPS59107524A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58229293A JPS59107524A (ja) 1983-12-05 1983-12-05 半導体素子の層間絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58229293A JPS59107524A (ja) 1983-12-05 1983-12-05 半導体素子の層間絶縁膜形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56029241A Division JPS5813088B2 (ja) 1981-02-27 1981-02-27 シロキサン変性ポリイミド前駆体の製造法

Publications (2)

Publication Number Publication Date
JPS59107524A true JPS59107524A (ja) 1984-06-21
JPH0259619B2 JPH0259619B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-13

Family

ID=16889856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58229293A Granted JPS59107524A (ja) 1983-12-05 1983-12-05 半導体素子の層間絶縁膜形成方法

Country Status (1)

Country Link
JP (1) JPS59107524A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0211631A (ja) * 1988-06-30 1990-01-16 Nippon Steel Chem Co Ltd 半導体保護用樹脂及び半導体
JPH05331283A (ja) * 1992-06-04 1993-12-14 Sumitomo Bakelite Co Ltd ポリイミド樹脂
JPH05331446A (ja) * 1992-06-04 1993-12-14 Sumitomo Bakelite Co Ltd 高分子量ポリイミド樹脂フィルム接着剤
US11231309B2 (en) 2016-05-11 2022-01-25 Siemens Healthcare Diagnostics Inc. Quick connection for liquid level sense-enabled metering probe

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0211631A (ja) * 1988-06-30 1990-01-16 Nippon Steel Chem Co Ltd 半導体保護用樹脂及び半導体
JPH05331283A (ja) * 1992-06-04 1993-12-14 Sumitomo Bakelite Co Ltd ポリイミド樹脂
JPH05331446A (ja) * 1992-06-04 1993-12-14 Sumitomo Bakelite Co Ltd 高分子量ポリイミド樹脂フィルム接着剤
US11231309B2 (en) 2016-05-11 2022-01-25 Siemens Healthcare Diagnostics Inc. Quick connection for liquid level sense-enabled metering probe

Also Published As

Publication number Publication date
JPH0259619B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-13

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