JPS59106163A - 光起電力素子の製造方法 - Google Patents

光起電力素子の製造方法

Info

Publication number
JPS59106163A
JPS59106163A JP57216614A JP21661482A JPS59106163A JP S59106163 A JPS59106163 A JP S59106163A JP 57216614 A JP57216614 A JP 57216614A JP 21661482 A JP21661482 A JP 21661482A JP S59106163 A JPS59106163 A JP S59106163A
Authority
JP
Japan
Prior art keywords
thin film
film
layer
forming
silicon compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57216614A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6323671B2 (enrdf_load_stackoverflow
Inventor
Shinichiro Ishihara
伸一郎 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57216614A priority Critical patent/JPS59106163A/ja
Publication of JPS59106163A publication Critical patent/JPS59106163A/ja
Publication of JPS6323671B2 publication Critical patent/JPS6323671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57216614A 1982-12-09 1982-12-09 光起電力素子の製造方法 Granted JPS59106163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216614A JPS59106163A (ja) 1982-12-09 1982-12-09 光起電力素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216614A JPS59106163A (ja) 1982-12-09 1982-12-09 光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59106163A true JPS59106163A (ja) 1984-06-19
JPS6323671B2 JPS6323671B2 (enrdf_load_stackoverflow) 1988-05-17

Family

ID=16691183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216614A Granted JPS59106163A (ja) 1982-12-09 1982-12-09 光起電力素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59106163A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5222471A (en) * 1975-08-13 1977-02-19 Hitachi Ltd Field radiation type electron gun

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5222471A (en) * 1975-08-13 1977-02-19 Hitachi Ltd Field radiation type electron gun

Also Published As

Publication number Publication date
JPS6323671B2 (enrdf_load_stackoverflow) 1988-05-17

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