JPS59100539A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59100539A
JPS59100539A JP58211730A JP21173083A JPS59100539A JP S59100539 A JPS59100539 A JP S59100539A JP 58211730 A JP58211730 A JP 58211730A JP 21173083 A JP21173083 A JP 21173083A JP S59100539 A JPS59100539 A JP S59100539A
Authority
JP
Japan
Prior art keywords
reactor
gas
silicon nitride
fluorine
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58211730A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527245B2 (https=
Inventor
ヤン・デイエレマン
フランシスカス・フベルタス・マリ−・サンデルス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS59100539A publication Critical patent/JPS59100539A/ja
Publication of JPH0527245B2 publication Critical patent/JPH0527245B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
JP58211730A 1982-11-16 1983-11-12 半導体装置の製造方法 Granted JPS59100539A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8204437A NL8204437A (nl) 1982-11-16 1982-11-16 Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen.
NL8204437 1982-11-16

Publications (2)

Publication Number Publication Date
JPS59100539A true JPS59100539A (ja) 1984-06-09
JPH0527245B2 JPH0527245B2 (https=) 1993-04-20

Family

ID=19840600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58211730A Granted JPS59100539A (ja) 1982-11-16 1983-11-12 半導体装置の製造方法

Country Status (6)

Country Link
US (1) US4717447A (https=)
EP (1) EP0109706B1 (https=)
JP (1) JPS59100539A (https=)
CA (1) CA1208810A (https=)
DE (1) DE3369600D1 (https=)
NL (1) NL8204437A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399533A (ja) * 1986-05-31 1988-04-30 Toshiba Corp シリコン窒化膜のドライエツチング方法及びドライエツチング装置
JPH03145725A (ja) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> エツチング方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158143A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 窒化シリコン膜のエッチング方法
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
US4778583A (en) * 1987-05-11 1988-10-18 Eastman Kodak Company Semiconductor etching process which produces oriented sloped walls
EP0297898B1 (en) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Method of dry etching
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
KR930005440B1 (ko) * 1989-10-02 1993-06-21 다이닛뽕 스쿠린 세이소오 가부시키가이샤 절연막의 선택적 제거방법
US5188704A (en) * 1989-10-20 1993-02-23 International Business Machines Corporation Selective silicon nitride plasma etching
JPH04302426A (ja) * 1991-03-29 1992-10-26 Sony Corp デジタル・エッチング方法
DE4232475C2 (de) * 1992-09-28 1998-07-02 Siemens Ag Verfahren zum plasmachemischen Trockenätzen von Si¶3¶N¶4¶-Schichten hochselektiv zu SiO¶2¶-Schichten
US5338395A (en) * 1993-03-10 1994-08-16 Micron Semiconductor, Inc. Method for enhancing etch uniformity useful in etching submicron nitride features
DE4315435C2 (de) * 1993-05-08 1995-03-09 Itt Ind Gmbh Deutsche Verfahren zum selektiven Ätzen von auf einem Halbleitersubstrat angeordneten Isolier- und Pufferschichten
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US5877090A (en) * 1997-06-03 1999-03-02 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH3 or SF6 and HBR and N2
US6165375A (en) 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6294102B1 (en) * 1999-05-05 2001-09-25 International Business Machines Corporation Selective dry etch of a dielectric film
US6372634B1 (en) 1999-06-15 2002-04-16 Cypress Semiconductor Corp. Plasma etch chemistry and method of improving etch control
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US7803639B2 (en) * 2007-01-04 2010-09-28 International Business Machines Corporation Method of forming vertical contacts in integrated circuits
US8008095B2 (en) * 2007-10-03 2011-08-30 International Business Machines Corporation Methods for fabricating contacts to pillar structures in integrated circuits
US8563225B2 (en) 2008-05-23 2013-10-22 International Business Machines Corporation Forming a self-aligned hard mask for contact to a tunnel junction
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
KR102390158B1 (ko) 2017-06-08 2022-04-25 쇼와 덴코 가부시키가이샤 에칭 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521596A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521596A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399533A (ja) * 1986-05-31 1988-04-30 Toshiba Corp シリコン窒化膜のドライエツチング方法及びドライエツチング装置
JPH03145725A (ja) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> エツチング方法

Also Published As

Publication number Publication date
DE3369600D1 (en) 1987-03-05
EP0109706B1 (en) 1987-01-28
NL8204437A (nl) 1984-06-18
EP0109706A1 (en) 1984-05-30
CA1208810A (en) 1986-07-29
JPH0527245B2 (https=) 1993-04-20
US4717447A (en) 1988-01-05

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