JPS5896790A - 埋め込みへテロ構造半導体レ−ザの製造方法 - Google Patents

埋め込みへテロ構造半導体レ−ザの製造方法

Info

Publication number
JPS5896790A
JPS5896790A JP19498781A JP19498781A JPS5896790A JP S5896790 A JPS5896790 A JP S5896790A JP 19498781 A JP19498781 A JP 19498781A JP 19498781 A JP19498781 A JP 19498781A JP S5896790 A JPS5896790 A JP S5896790A
Authority
JP
Japan
Prior art keywords
layer
active layer
semiconductor laser
mesa stripe
current blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19498781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237914B2 (de
Inventor
Mitsuhiro Kitamura
北村　光弘
Ikuo Mito
郁夫 水戸
Isao Kobayashi
功郎 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP19498781A priority Critical patent/JPS5896790A/ja
Publication of JPS5896790A publication Critical patent/JPS5896790A/ja
Publication of JPS6237914B2 publication Critical patent/JPS6237914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP19498781A 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法 Granted JPS5896790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19498781A JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19498781A JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS5896790A true JPS5896790A (ja) 1983-06-08
JPS6237914B2 JPS6237914B2 (de) 1987-08-14

Family

ID=16333652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19498781A Granted JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS5896790A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202581A (ja) * 1985-09-12 1987-09-07 Agency Of Ind Science & Technol 半導体レーザとその製造方法
US5341002A (en) * 1989-06-07 1994-08-23 Plumb Richard G Semiconductor light emitting device with ridged contact
US6546034B2 (en) * 1999-12-28 2003-04-08 Hitachi, Ltd. Semiconductor laser device, semiconductor laser array device and optical fiber transmission system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202581A (ja) * 1985-09-12 1987-09-07 Agency Of Ind Science & Technol 半導体レーザとその製造方法
JPH0525193B2 (de) * 1985-09-12 1993-04-12 Kogyo Gijutsuin
US5341002A (en) * 1989-06-07 1994-08-23 Plumb Richard G Semiconductor light emitting device with ridged contact
US6546034B2 (en) * 1999-12-28 2003-04-08 Hitachi, Ltd. Semiconductor laser device, semiconductor laser array device and optical fiber transmission system

Also Published As

Publication number Publication date
JPS6237914B2 (de) 1987-08-14

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