JPH0525193B2 - - Google Patents
Info
- Publication number
- JPH0525193B2 JPH0525193B2 JP60200648A JP20064885A JPH0525193B2 JP H0525193 B2 JPH0525193 B2 JP H0525193B2 JP 60200648 A JP60200648 A JP 60200648A JP 20064885 A JP20064885 A JP 20064885A JP H0525193 B2 JPH0525193 B2 JP H0525193B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- active
- striped
- cladding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000005253 cladding Methods 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 7
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 54
- 239000011358 absorbing material Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20064885A JPS62202581A (ja) | 1985-09-12 | 1985-09-12 | 半導体レーザとその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20064885A JPS62202581A (ja) | 1985-09-12 | 1985-09-12 | 半導体レーザとその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202581A JPS62202581A (ja) | 1987-09-07 |
| JPH0525193B2 true JPH0525193B2 (de) | 1993-04-12 |
Family
ID=16427891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20064885A Granted JPS62202581A (ja) | 1985-09-12 | 1985-09-12 | 半導体レーザとその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202581A (de) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896790A (ja) * | 1981-12-03 | 1983-06-08 | Nec Corp | 埋め込みへテロ構造半導体レ−ザの製造方法 |
-
1985
- 1985-09-12 JP JP20064885A patent/JPS62202581A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896790A (ja) * | 1981-12-03 | 1983-06-08 | Nec Corp | 埋め込みへテロ構造半導体レ−ザの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62202581A (ja) | 1987-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |