JPS641073B2 - - Google Patents
Info
- Publication number
- JPS641073B2 JPS641073B2 JP1345182A JP1345182A JPS641073B2 JP S641073 B2 JPS641073 B2 JP S641073B2 JP 1345182 A JP1345182 A JP 1345182A JP 1345182 A JP1345182 A JP 1345182A JP S641073 B2 JPS641073 B2 JP S641073B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa stripe
- buried
- current blocking
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000000903 blocking effect Effects 0.000 claims description 15
- 238000005253 cladding Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1345182A JPS58131784A (ja) | 1982-01-29 | 1982-01-29 | 埋め込みヘテロ構造半導体レ−ザ |
EP82109619A EP0083697B1 (de) | 1981-10-19 | 1982-10-18 | Zweikanaliger Planar-vergrabene-Heterostruktur-Laser |
DE8282109619T DE3277278D1 (en) | 1981-10-19 | 1982-10-18 | Double channel planar buried heterostructure laser |
US06/434,990 US4525841A (en) | 1981-10-19 | 1982-10-18 | Double channel planar buried heterostructure laser |
CA000413780A CA1196077A (en) | 1981-10-19 | 1982-10-19 | Double channel planar buried heterostructure laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1345182A JPS58131784A (ja) | 1982-01-29 | 1982-01-29 | 埋め込みヘテロ構造半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58131784A JPS58131784A (ja) | 1983-08-05 |
JPS641073B2 true JPS641073B2 (de) | 1989-01-10 |
Family
ID=11833499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1345182A Granted JPS58131784A (ja) | 1981-10-19 | 1982-01-29 | 埋め込みヘテロ構造半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58131784A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837338A (ja) * | 1994-07-21 | 1996-02-06 | Nec Corp | 2重チャネル型プレーナ埋込み構造半導体レーザ及び その製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688390A (en) * | 1979-12-20 | 1981-07-17 | Nec Corp | Manufacture of semiconductor laser |
-
1982
- 1982-01-29 JP JP1345182A patent/JPS58131784A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58131784A (ja) | 1983-08-05 |
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