JPS5893377A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893377A
JPS5893377A JP56192593A JP19259381A JPS5893377A JP S5893377 A JPS5893377 A JP S5893377A JP 56192593 A JP56192593 A JP 56192593A JP 19259381 A JP19259381 A JP 19259381A JP S5893377 A JPS5893377 A JP S5893377A
Authority
JP
Japan
Prior art keywords
semiconductor
electron
layer
control electrode
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56192593A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0445976B2 (enrdf_load_stackoverflow
Inventor
Kazuo Nanbu
和夫 南部
Shigeru Tatsuta
龍田　茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56192593A priority Critical patent/JPS5893377A/ja
Publication of JPS5893377A publication Critical patent/JPS5893377A/ja
Publication of JPH0445976B2 publication Critical patent/JPH0445976B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56192593A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192593A JPS5893377A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192593A JPS5893377A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893377A true JPS5893377A (ja) 1983-06-03
JPH0445976B2 JPH0445976B2 (enrdf_load_stackoverflow) 1992-07-28

Family

ID=16293849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192593A Granted JPS5893377A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893377A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251268A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 半導体装置
JPS62293780A (ja) * 1986-06-13 1987-12-21 Nec Corp 半導体装置
JPS63177573A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 超伝導トランジスタ
US10109713B2 (en) 2003-09-09 2018-10-23 The Regents Of The University Of California Fabrication of single or multiple gate field plates
JP7640000B1 (ja) * 2024-03-28 2025-03-05 三菱電機株式会社 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251268A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 半導体装置
JPS62293780A (ja) * 1986-06-13 1987-12-21 Nec Corp 半導体装置
JPS63177573A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 超伝導トランジスタ
US10109713B2 (en) 2003-09-09 2018-10-23 The Regents Of The University Of California Fabrication of single or multiple gate field plates
JP7640000B1 (ja) * 2024-03-28 2025-03-05 三菱電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0445976B2 (enrdf_load_stackoverflow) 1992-07-28

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