JPS5892218A - 半導体装置作製方法 - Google Patents

半導体装置作製方法

Info

Publication number
JPS5892218A
JPS5892218A JP56191268A JP19126881A JPS5892218A JP S5892218 A JPS5892218 A JP S5892218A JP 56191268 A JP56191268 A JP 56191268A JP 19126881 A JP19126881 A JP 19126881A JP S5892218 A JPS5892218 A JP S5892218A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
semiconductor layer
reaction
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56191268A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512850B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56191268A priority Critical patent/JPS5892218A/ja
Publication of JPS5892218A publication Critical patent/JPS5892218A/ja
Publication of JPH0512850B2 publication Critical patent/JPH0512850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3408—
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
JP56191268A 1981-11-28 1981-11-28 半導体装置作製方法 Granted JPS5892218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191268A JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191268A JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1219302A Division JPH02119126A (ja) 1989-08-25 1989-08-25 半導体装置作製方法
JP3169305A Division JP2573108B2 (ja) 1991-06-14 1991-06-14 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS5892218A true JPS5892218A (ja) 1983-06-01
JPH0512850B2 JPH0512850B2 (enExample) 1993-02-19

Family

ID=16271712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191268A Granted JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS5892218A (enExample)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256625A (ja) * 1985-05-08 1986-11-14 Nippon Denso Co Ltd 薄膜半導体素子の製造方法
JPS63215037A (ja) * 1987-03-04 1988-09-07 Toshiba Corp ケイ素系薄膜の製造方法
JPH056877A (ja) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd 炭素被膜のエツチング方法
JPH0620975A (ja) * 1992-09-11 1994-01-28 Semiconductor Energy Lab Co Ltd 炭素膜作製方法
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7465966B2 (en) 2003-03-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film formation method and manufacturing method of semiconductor device
WO2014050304A1 (ja) * 2012-09-27 2014-04-03 三洋電機株式会社 光電変換素子とその製造方法

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US5556794A (en) * 1985-05-07 1996-09-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having low sodium concentration
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS61256625A (ja) * 1985-05-08 1986-11-14 Nippon Denso Co Ltd 薄膜半導体素子の製造方法
JPS63215037A (ja) * 1987-03-04 1988-09-07 Toshiba Corp ケイ素系薄膜の製造方法
JPH056877A (ja) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd 炭素被膜のエツチング方法
JPH0620975A (ja) * 1992-09-11 1994-01-28 Semiconductor Energy Lab Co Ltd 炭素膜作製方法
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US6223685B1 (en) 1996-10-29 2001-05-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6846742B2 (en) 2001-02-08 2005-01-25 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US7465966B2 (en) 2003-03-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film formation method and manufacturing method of semiconductor device
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
WO2014050304A1 (ja) * 2012-09-27 2014-04-03 三洋電機株式会社 光電変換素子とその製造方法
JPWO2014050304A1 (ja) * 2012-09-27 2016-08-22 パナソニックＩｐマネジメント株式会社 光電変換素子とその製造方法

Also Published As

Publication number Publication date
JPH0512850B2 (enExample) 1993-02-19

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