JPH0512850B2 - - Google Patents

Info

Publication number
JPH0512850B2
JPH0512850B2 JP56191268A JP19126881A JPH0512850B2 JP H0512850 B2 JPH0512850 B2 JP H0512850B2 JP 56191268 A JP56191268 A JP 56191268A JP 19126881 A JP19126881 A JP 19126881A JP H0512850 B2 JPH0512850 B2 JP H0512850B2
Authority
JP
Japan
Prior art keywords
reactor
semiconductor layer
substrate
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56191268A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5892218A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56191268A priority Critical patent/JPS5892218A/ja
Publication of JPS5892218A publication Critical patent/JPS5892218A/ja
Publication of JPH0512850B2 publication Critical patent/JPH0512850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3408—
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
JP56191268A 1981-11-28 1981-11-28 半導体装置作製方法 Granted JPS5892218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191268A JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191268A JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1219302A Division JPH02119126A (ja) 1989-08-25 1989-08-25 半導体装置作製方法
JP3169305A Division JP2573108B2 (ja) 1991-06-14 1991-06-14 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS5892218A JPS5892218A (ja) 1983-06-01
JPH0512850B2 true JPH0512850B2 (enExample) 1993-02-19

Family

ID=16271712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191268A Granted JPS5892218A (ja) 1981-11-28 1981-11-28 半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS5892218A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS61256625A (ja) * 1985-05-08 1986-11-14 Nippon Denso Co Ltd 薄膜半導体素子の製造方法
JP2726414B2 (ja) * 1987-03-04 1998-03-11 株式会社東芝 ケイ素系薄膜の製造方法
JP2573108B2 (ja) * 1991-06-14 1997-01-22 株式会社 半導体エネルギー研究所 プラズマ処理方法
JPH0732141B2 (ja) * 1992-09-11 1995-04-10 株式会社半導体エネルギー研究所 炭素膜作製方法
JP3571404B2 (ja) * 1995-03-03 2004-09-29 アネルバ株式会社 プラズマｃｖｄ装置及びその場クリーニング後処理方法
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
TW460943B (en) * 1997-06-11 2001-10-21 Applied Materials Inc Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP4170120B2 (ja) 2003-03-19 2008-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
WO2014050304A1 (ja) * 2012-09-27 2014-04-03 三洋電機株式会社 光電変換素子とその製造方法

Also Published As

Publication number Publication date
JPS5892218A (ja) 1983-06-01

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