JPS5892218A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5892218A
JPS5892218A JP56191268A JP19126881A JPS5892218A JP S5892218 A JPS5892218 A JP S5892218A JP 56191268 A JP56191268 A JP 56191268A JP 19126881 A JP19126881 A JP 19126881A JP S5892218 A JPS5892218 A JP S5892218A
Authority
JP
Japan
Prior art keywords
process
manufacture
type
reaction
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56191268A
Other versions
JPH0512850B2 (en
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP56191268A priority Critical patent/JPH0512850B2/ja
Publication of JPS5892218A publication Critical patent/JPS5892218A/en
Publication of JPH0512850B2 publication Critical patent/JPH0512850B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02529Silicon carbide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To form a practically instrinsic coating film on a semiconductor layer made at the previous process in order to prevent an N or P type impurity in a semiconductor device made at the previous process from discharging again from the inner wall of a reaction device or the holder of a substrate and from mixing in a P or N type semiconductor made at the next process when the first semiconductor devices having P type and N type semiconductor layers are continuously made by a plasma vapor method by using the same reaction tank. CONSTITUTION:Evacuation is applied to a reaction furnace in process 49. Silicon or silicon carbide is coated to a reaction cylinder and a holder in process 40. Next, evacuation 41 to a system, furthermore, the manufacture 42 of a P or an N type semiconductor device, the manufacture 43 of an I type semiconductor layer, the manufacture 44 of an N type semiconductor layer are done to make 48 the first semiconductor device. Furthermore, after that, the possibility of alternately mixing a P or an N type impurity between the final process 44 for the manufacture 48 of the first semiconductor device and the first process 42 at the next process 48 can be removed by coating an I type semiconductor layer shown as 46 to above system and a reaction system inserted and installed the reaction furnace and the holder.
JP56191268A 1981-11-28 1981-11-28 Expired - Lifetime JPH0512850B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191268A JPH0512850B2 (en) 1981-11-28 1981-11-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191268A JPH0512850B2 (en) 1981-11-28 1981-11-28

Publications (2)

Publication Number Publication Date
JPS5892218A true JPS5892218A (en) 1983-06-01
JPH0512850B2 JPH0512850B2 (en) 1993-02-19

Family

ID=16271712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191268A Expired - Lifetime JPH0512850B2 (en) 1981-11-28 1981-11-28

Country Status (1)

Country Link
JP (1) JPH0512850B2 (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256625A (en) * 1985-05-08 1986-11-14 Nippon Denso Co Ltd Manufacture of thin film semiconductor element
JPS63215037A (en) * 1987-03-04 1988-09-07 Toshiba Corp Manufacture of silicon thin film
JPH056877A (en) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd Etching method of carbon film
JPH0620975A (en) * 1992-09-11 1994-01-28 Semiconductor Energy Lab Co Ltd Carbon film manufacturing method
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7465966B2 (en) 2003-03-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film formation method and manufacturing method of semiconductor device
WO2014050304A1 (en) * 2012-09-27 2014-04-03 三洋電機株式会社 Photoelectric conversion element and method for manufacturing same

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US5556794A (en) * 1985-05-07 1996-09-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having low sodium concentration
JPS61256625A (en) * 1985-05-08 1986-11-14 Nippon Denso Co Ltd Manufacture of thin film semiconductor element
JPS63215037A (en) * 1987-03-04 1988-09-07 Toshiba Corp Manufacture of silicon thin film
JPH056877A (en) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd Etching method of carbon film
JPH0620975A (en) * 1992-09-11 1994-01-28 Semiconductor Energy Lab Co Ltd Carbon film manufacturing method
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6223685B1 (en) 1996-10-29 2001-05-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6846742B2 (en) 2001-02-08 2005-01-25 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US7465966B2 (en) 2003-03-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film formation method and manufacturing method of semiconductor device
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
WO2014050304A1 (en) * 2012-09-27 2014-04-03 三洋電機株式会社 Photoelectric conversion element and method for manufacturing same
JPWO2014050304A1 (en) * 2012-09-27 2016-08-22 パナソニックIpマネジメント株式会社 Its manufacturing method and photoelectric conversion element

Also Published As

Publication number Publication date
JPH0512850B2 (en) 1993-02-19

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