JPS5892218A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a practically instrinsic coating film on a semiconductor layer made at the previous process in order to prevent an N or P type impurity in a semiconductor device made at the previous process from discharging again from the inner wall of a reaction device or the holder of a substrate and from mixing in a P or N type semiconductor made at the next process when the first semiconductor devices having P type and N type semiconductor layers are continuously made by a plasma vapor method by using the same reaction tank. CONSTITUTION:Evacuation is applied to a reaction furnace in process 49. Silicon or silicon carbide is coated to a reaction cylinder and a holder in process 40. Next, evacuation 41 to a system, furthermore, the manufacture 42 of a P or an N type semiconductor device, the manufacture 43 of an I type semiconductor layer, the manufacture 44 of an N type semiconductor layer are done to make 48 the first semiconductor device. Furthermore, after that, the possibility of alternately mixing a P or an N type impurity between the final process 44 for the manufacture 48 of the first semiconductor device and the first process 42 at the next process 48 can be removed by coating an I type semiconductor layer shown as 46 to above system and a reaction system inserted and installed the reaction furnace and the holder.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device with good reproducibility and characteristics by a plasma vapor phase method.

In the present invention, after a first semiconductor device having P-type and N-type semiconductor layers is formed on a substrate provided in a reactor by a plasma vapor phase method, N or P-type impurities of this semiconductor device are removed. The internal walls of the reactor are then coated onto the P- or N-type semiconductor layer produced, and during each step an intrinsic or substantially intrinsic (hereinafter referred to as one layer) coating is applied to the previously produced semiconductor layer. The process of forming a film (in this case, the film formed at the beginning of the next step may also be irradiated) is intended to substantially remove past history. The purpose is to provide a process in which the previously produced semiconductor layer that adheres to the inner wall of the reaction device, the surface of the substrate holder, etc. is removed by turning reactive gas such as ay into plasma. do.

It also has the characteristic of being able to speak very well.

The present invention also provides a semiconductor device having at least one junction, particularly a P layer, a P layer, an N layer, or a PN junction on a substrate provided in a reactor, in which the inner wall of the reactor, particularly plasma atoms or reactive gases, is In order to prevent the emission of cine particles, particularly oxygen and alkali metal atoms, from the colliding inner walls, the purpose is to form an intrinsic or substantially intrinsic semiconductor layer, such as non-single crystal silicon, on these surfaces in advance.

In order to prevent re-emission by coating to substantially remove these, the present invention coats the semiconductor layer with an electromagnetic energy output Po, e.g., 5 to 100 W, necessary for manufacturing a semiconductor device.
For example, 200-320°C, PO-10
W (however, the minimum is 5W) to P.

+30W range, also To-50'0-To+50@O
Particularly preferably, it is produced under the same or approximately the same conditions as Po and To, and is characterized by being formed to a thickness of 0.2 to 1 μm.

Conventionally, with the plasma CVD method, semiconductor devices with PIN junctions, etc., were manufactured in a single reactor; however, when this junction was replaced, it was plagued by completely unexplained deterioration and variations. As a result, the reliability of the semiconductor device was inadequate.

As a result of investigating the cause of this, we found that the biggest cause of this is that oxygen and alkali metals adhering to the reactor mix into the semiconductor layer, causing a decrease in electrical conductivity. Even if lPPM is mixed in, the implied conductivity IC1'
(, i c m) to 1M (rLc m5' and 1/10
I dropped it to 0K and ran.

Furthermore, in the case of alkali metals, when 5PPM is mixed, the conductivity of P-type and I-type and the conductivity of the transparent conductive film are lowered.

In order to prevent these contamination, a semiconductor layer is formed in advance to a thickness of 0.2 to 2μ on the inner wall of the reactor and on the parts of the substrate holder (also called boat) that will be sputtered by the reactive gas generated by plasma. It was extremely important that the material be completely coated. Furthermore, regarding the deterioration of reproducibility characteristics, when manufacturing one semiconductor device, if the last step is to create a K or P type semiconductor layer, and then the next first step is to create a P or N type semiconductor layer. When I did, 1
Initial impurities such as phosphorus are mixed into the P-type semiconductor layer at a concentration of 0 to 10 cm'. For this reason, the P-type semiconductor layer is made by adding boron to a concentration of 10 to 10 am, for example.
Even as a mold layer, its electrical conductivity is extremely poor because the number of recombination centers increases due to the incorporation of phosphorus, and when there is no incorporation, the electrical conductivity is 1d~16'(ACm)I, whereas it is 10-xl O''
(AOm)' and 1/100 to 1/10001. An unforgettable friend.

For this reason, in the PIN type photoelectric conversion device, an efficiency of 2 to 4% was obtained with a variation of ±200 degrees from run to run, which is undesirable. It has become possible to obtain a conversion efficiency about 3 to 5 times higher than 10%.

In addition, in order to reduce the effect of this impurity oxygen doping,
Patent application filed by the inventor: Semiconductor device manufacturing method 5
6-55608 (status display 53-15288'/Showa 53
(filed on December 10, 2013) is known. For example, this is P
When attempting to fabricate an engineered N semiconductor device, the process is carried out by creating independent reactors for each of the P, 1, and N layers, and moving the substrate between the layers. This method can take the same measures as the present invention and can provide extremely favorable electrical characteristics. However, in that case, the equipment would be three times as large as the one-chamber system, and the manufacturing cost would be 2.5 to 3 times more expensive. Furthermore, it had drawbacks such as not being suitable for mass production.

The reaction delta according to the present invention is particularly effective in a horizontal reactor. It is also particularly effective when a large amount of semiconductor devices are mounted on a substrate, and has the great feature that the manufacturing cost can be reduced to 1/100 of that of a vertical reactor, including the depreciation of the equipment for each semiconductor device. have.

That is, the present invention provides a horizontally arranged reactor or reaction tube (10 to 30 cuus, length 1 to 30 cm) for mass production.
The method using 5m) will be mainly described.

A pair of electrodes for supplying electromagnetic energy for turning a reactive gas into plasma are provided on the outside of the reaction tube, and a heating device is provided outside of the electrodes to surround the reaction tube and the electrodes, and the inside of the reactor is heated in the direction of the furnace. This method involves flowing a reactive gas and arranging the substrate along the flow of the gas.

Further, in such a device, a substrate is arranged perpendicularly or parallel to the electromagnetic field generated by a pair of electrodes, and these are arranged in multiple stages or in several rows to form a substrate of 2 to 20 c♂, for example, 10 c
The method mainly focuses on forming a film, particularly a semiconductor film mainly made of silicon, silicon carbide, germanium silicide, germanium tympanum, or a tetravalent element, on a total of 400 surfaces of 20 rows and 20 rows of 400 m' substrates at once. It is written as

The present invention uses a reactive gas consisting of a hydride or halide (carbohydrate silicide gas) having a carbon-silicon bond, a silicide gas such as silane (stnun 1), or a hydrocarbon such as acetylene to form a surface on the surface to be formed. A film containing non-single crystal silicon carbide, silicon or carbon as a main component is applied to the coating from 0.05 to
A plasma vapor phase process is performed at a reactor pressure of 1 tOrr and a temperature of 100 to 400°C.

The present invention further provides such reactive gases with impurity gases containing impurities such as B, AI, Ga, and In, such as diborane (B), and impurity gases containing V-valent impurities such as phoscine (pa) or arsine (As). H,) is gradually added to form a P-type layer closely on the substrate having the surface to be formed, and then a -C layer is formed in the order of P-type layer and N-type layer, and this is repeated. The purpose of the present invention is to stably produce semiconductors with an amorphous structure (mu 8
), semi-amorphous (semi-amorphous, hereafter referred to as 8A8) with a size of 5 to 100 μm, and micro polycrystal (micropolycrystal, hereinafter referred to as PC) with a size of 5 to 200 μm. ) The purpose is to fabricate a non-single crystal semiconductor layer such as a semiconductor having the structure shown in FIG. Sara rc
When applying strong electromagnetic energy, the substrate surface tends to have a sputtered amorphous structure full of electrical defects.In order to eliminate such defective structures, the substrates are spaced apart from each other by 10w40mm, typically 20 to 25mm, to prevent plasma reaction. Even if a high energy of 200 to 500 W is required, the distance to obtain the substantial plasma energy of this subisis on the surface to be formed is controlled by the distance between the substrates, and a weak power of 2 to aOW is effectively applied. It is characterized in that it has the same properties when coated with.

Therefore, in the present invention, when silicon carbide (8iXO/-XOα<1) is to be made from the reactive gas that is the starting material, a material having a carbon-silicon bond is used. That is, a hydride or a halogenide having a carbon-silicon bond, such as tetraethylsilane (al(c))
TMEI), tetraethylsilane (s 1 (a,
Q), s 1(oQ xo1*t(Is x= 3
) A reactive gas such as Si (CQX111tχ1'-xε3) is used to facilitate obtaining the 81-0 bond in the reaction product.

Also, when trying to obtain a film whose main component is silicon, 81n
Ht-, Cn2N) silane, 81F9, or a mixed gas thereof was used. When trying to obtain carbon, acetylene (0, phantom or ethylene (0) was mainly used. By doing this, silicon (S 1>, carbon [silicon (El
i x 07-, O<x<1) or carbon (0)
(If you put these together, s 1x 0r-r (o≦X≦
1), hence the term silicon carbide hereinafter refers to 81XC, (OtX41)).

Furthermore, a valent or heptavalent impurity is added to form a P-type, 1-type (intrinsic or substantially intrinsic without artificially adding impurities including autodoping, etc.) from the surface to be formed, and further KN.
A type of semiconductor or semi-insulator was fabricated.

Furthermore, when such a reactive gas is used, the reactor can be heated to 1 atm or less, particularly 0.01 to 10 tOrr, typically 0.3 to 0.0
, even with electromagnetic energy of 50 W or less under a pressure of 5 torr, for example, 0.01 to 100 MHz special K! S.O.
It is possible to form a coating at OICHg t or 13.56 MHz. That is, low energy plasma, O
It was possible to use it as a VD device.

When a high-energy plasma atmosphere of 50 to 600 W is used, the formed silicon carbide becomes microcrystalline, and as a result, in P type or N type, boron or phosphorus is added to 0.1
When added ~5% (here the ratio of (BH or PIE) / (carbide gas or carbide silicide gas + silicide gas) is expressed as a percentage), at low energy the electrical conductivity is 10~1o←cm)' 10 to 10 (,
nam)' and was able to increase it approximately 1,000 times.

Moreover, the silicon carbide obtained using this high-energy method is 5
It was possible to have a so-called Himu B structure having a microcrystalline structure with a size of ~200A.

In such a BAR, the ionization rate of the P or N type impurity as an acceptor or donor is set to 91 to 100.
was able to activate all of the added impurities.

The plasma vapor phase method of the present invention will be explained below with reference to the drawings.

FIG. 1 shows an outline of a plasma 0VD apparatus using the present invention.

In FIG. 1, a substrate (1) having a surface to be formed is held in a square quartz holder, and the drawing shows a total of 14 holders in one stage and two rows. The substrate and holder were installed in advance in a separate room at the front of the reactor, near the entrance (3o), and the pulp (
32) Vacuuming is performed by the rotary pump (33). Furthermore, the opening/closing doors (3 doors) are opened, and the automatic feeder is introduced into the reactor, and the mixing plate for the mixer (
All three will be placed at the same time. These were carried out in a vacuum state in both the reactor and a separate room to prevent even the slightest amount of oxygen (air) from entering the reactor.

Furthermore, by closing the opening/closing door (34), each substrate is placed between the electrode (9) and Cl0) as shown in the drawing. A mixer (8) is installed in front of the reactor (c) to create a laminar flow of reactive gases from this holder, and these reactive gases are evenly distributed in the gap between the substrates. It is equipped to be injected. The surface to be formed is the lower surface of the substrate or side surfaces arranged vertically with their back surfaces stacked on top of each other.

The drawing also shows the structure of the reaction system viewed from above. The substrates (1) are arranged vertically with their back sides facing each other. As shown, flakes are removed to the bottom using gravity. This is extremely important when considering mass production yield. In addition, this substrate (a reaction furnace (2
), a second electric field of electromagnetic energy is applied perpendicularly or parallel to this substrate (parallel makes it easier to obtain a uniform coating).
A pair of electrodes (9) ρO) are arranged vertically or horizontally as shown in Figure ■ or (B) Special K CB), and an electric furnace (6) is installed outside the electrodes. Oshi,
Substrate (1) is 100-400°C typically 300°C
is heated to.

The reactive gas is a hydrogen or helium carrier gas, such as helium, and is an impurity. ＆≦
From Niseichi/◇◆, the heptavalent impurity phosuhin (
l→Yoshi, silane, a silicide gas, which is an additive with a ■ value, is reduced to 0.
It was introduced at the time.

In addition, when reactive gas TM8 (to) having a carbon-silicon bond is used, since it is liquid in the initial state, the stainless steel container Q
stored in υ. This container is controlled at a predetermined temperature by an electronic constant temperature layer (a).

This TM8 has a boiling point of 2660, and the p-tally pump 0'4 is evacuated through pulp (1), and the inside of the reactor is 0.
It was maintained at 0.01 to 1 OtOrr, particularly 0.02 to 0.4 torr. By doing this, 7M8 can be vaporized at a pressure as low as 1 atm, and as a result, without special heating. Introducing this vaporized 7M8 into the reactor through a flowmeter at a concentration of 100-10-10 - is easier to control the flow rate than the conventional method of bubbling the container and releasing the reactive gas. It is technically important to be able to do this with high precision.O If the flowmeter becomes clogged in practice, we have introduced (c) a siheliame in the drawing.

In addition, when removing reaction products attached to the inner wall or surface of the reaction tube 01 or holder (2), use Uyoyoru 01. Alternatively, OF, +O, (2 to 6 channels) was introduced and electromagnetic energy was applied to generate fluorine radicals, which were removed by gas phase etching.

Furthermore, in this plasma discharge, after the reactive gas passes through the mixing chamber (8) and is mixed, it decomposes or reacts in the excitation chamber (c), and mainly involves a spatial reaction in which reaction products are formed on the substrate. Use 9. Electromagnetic energy is a power source (
4) Direct current or high frequency was mainly used.

In this way, a silicon carbide film was formed on the surface to be formed.

For example, the substrate temperature is 300”O, the high frequency energy output is 26”
W1: 850 cc of silane or Te M, 250 cc of He as a carrier gas.

(Reactive gas/He) A film growth rate of 160 μm/min could be obtained.

Further, to form this film, a FIN junction, a pH junction, a P-type junction, an Nx junction, a P-type NP111 junction, etc. were formed by gradually laminating the necessary reaction products to the required thickness on the substrate.

After forming a film on the surface to be formed in this manner and thoroughly purging the reaction tube, open the opening/closing door (34) and open the mixer mixing plate (34).
5) Transfer the substrate on the jig (3) to a separate chamber using an automatic extraction tube, and place both the reaction tube and the separate chamber under vacuum (0, (ltorr).
(below) K and moved. Furthermore, after closing the opening/closing door (34), the pulp was opened from (31) in a separate room and air was filled to bring it to atmospheric pressure. As is clear from the examples, in the present invention, after the reactive gases are mixed in the mixer (8), the exhaust port (6) is formed in a single layer (the gas was in random motion when it was turned into plasma). K sink 1 Place the substrate parallel to this flow, and deposit the film thickness on the surface to be formed with a variation of 0.1 to 3μ within ±5%.
The film is characterized by forming a film with a thickness of When forming a 01+ film, when the reaction tubes are made long, such as 20 stages and 20 rows, instead of 1 stage and 2 rows as shown in the drawing, 0
．． Not 4'tOrr but Sara KO02,0,1,0,0
It is important to maintain a pressure as low as 5 torr in order to obtain uniformity of the film quality, especially between the front and rear rows.Also, it is important to maintain a pressure as low as 5 torr. In order to prevent contamination, a separate room was provided, and the operation was connected to the atmosphere via this separate room, which was extremely important for obtaining reproducibility of the properties of the resulting coatings.

Figure 2 shows the relationship between the arrangement of the substrate (1) and the electrodes (1) when viewed from the direction of the exhaust port (6) in the drawing of Figure 1. (No. 9 (10
) in which the electromagnetic field is arranged horizontally.In this case, the number of substrates that can be introduced at once can be increased.

In Figure 2 CB), both electrodes (electromagnetic field by duck (10), substrate side) are vertical, and the number of substrates arranged is 2 (4).
Double.

FIG. 3 shows an operational procedure chart of the semiconductor device manufacturing method of the present invention.

In the drawing, 0" is O due to vacuuming of the reactor.
, indicating retention below oxtorr. Furthermore, 0 of a1″
0) shows a coating of silicon or silicon carbide on the reactor or reaction tube and holder according to the invention.

The details of this coating are shown in Figure 3 (B), (
0). Figure 3 (9) shows that the vacuum is 0.0 by evacuation (49).
After maintaining the temperature at 0.01 torr or less for 10 to 30 minutes, plasma cleaning was performed using electromagnetic energy to remove hydrogen adsorption, moisture, and oxygen at an output of 30 to 50 W for 0 to 30 minutes. After further removing the hydrogen, the helium is simultaneously applied with an output of 30 to 50W using ←).
Plasma was generated for 30 minutes, and hydrogen on the surface was further removed. For this hydrogen plasma generation (5o), 1~
When Hoe or 01 is added at a concentration of 5%,
Chlorine radicals are generated at the same time, and these radicals have the effect of scooping out alkali metals such as sodium present inside the holder, such as quartz. For this reason, it was possible to reduce the concentration of sodium, moisture, and oxygen at pack ground level to 1 ocm or less in the formed film, which was an extremely important pretreatment step. In order to remove residual adsorbed chlorine, sputtering with an inert gas as described in (51) was also effective.

After evacuating these systems, silane, which is a silicide gas, or τMB, which is a silicon carbide compound, is introduced and decomposed by plasma energy, typically 0.1 to 2μ.
．． It was formed to a thickness of 2 to 0.5p. When forming these films, they are particularly thick in areas where high electromagnetic energy is applied, that is, areas where impurities are likely to be re-released.
This yielded double positive results.

Even when such a complicated pretreatment process of the present invention is not performed, silicon or silicon carbide is similarly formed in the range of 0.1 to 2 μm at (52) after evacuation as shown in FIG. 3(0)K. It was rarely effective to prevent the re-release of oxygen and alkali metal from the reactor walls.

In addition, in t and c of FIG. 3(A), for the fabrication of the semiconductor device, the substrate is coated, the system is evacuated (4)), the P or N type semiconductor is fabricated (42), and the molded semiconductor layer is formed. Fabrication (ai, fabrication of y-type semiconductor layer 04) was performed, and a first semiconductor device was fabricated α8). It goes without saying that this semiconductor device must be manufactured by a device design method having at least one junction of the above-described p-layer, NX, p-layer, PN, etc.

After that, insert the reactor and the holder into this system.46)
The semiconductor layer shown in K or the same semiconductor layer as the semiconductor layer shown in C2) was coated. The details are shown in Figure 3 (O content % (6)).

That is, Fig. 3 φ) is the same as the above-mentioned fCill h IL, evacuation (49), hydrogen plasma discharge (5o), helium plasma i treatment (51), and the step of forming a semiconductor layer in the first step of the run of )4f4ry ( 52). However, since this (50) (5]) has already been done in 06) in ■, generally 0.1 to (52) in (0)
It was sufficient to produce a semiconductor layer with a thickness of 2μ.

t7'? In the fabrication of the previous semiconductor device (4o), that is, to eliminate the history of the previous run, a plasma etching step (IOK) may be performed (see FIG. 3(B)).
Vacuuming (49) OIF maku is 01P+OQl'J5%
) was introduced using the α force shown in Figure 1, and plasma etching (Step 5) was performed for 20 minutes to 1 hour. Further, vacuuming was performed, and then hydrogen plasma treatment (
50) for 10 to 30 minutes, and then 0.05 to 0.
．． 5μ type 1 or semiconductor layer of the first run of the next process (
A simple method using the same conductivity type and components as 42) is (6)
Vacuum evacuation and plasma etching (removal of remaining adsorbed gas in the 5th stage (6o) C) as shown in (4G) were carried out.

By doing this, the last step c4) of the first semiconductor device fabrication (4B) and the first step (42) of the next step (48) are completed.
) could eliminate the possibility that P or N type impurities would be mixed in at K(42).

Carbon and gel at 0 xuan again! Additives such as pre-me 02)
It was also possible to prevent contamination with K.

The results of evaluating the effects of the method of the present invention are shown in FIG. 4. FIG. 4 shows the results of a photoelectric conversion device manufactured using the method of the present invention. 500 ~
2,000 μm, and a multilayer electrode on which tin oxide or antimony oxide is formed to a thickness of 100 to 500 μm.
xc,, O(X'-1) (for example, x* 0.3 to 0.
5) to a thickness of 100 to 300 μm, and to this layer, silicon of 0.4 μm to 0.4 μm to 0.4 μm to 8 μm of intrinsic or substantially intrinsic silicon is added.
0. '7μ thick, and further this upper surface KM type silicon sixo, -, o XCX for example! , 0.3-0.5)
(1, (44),
(42i)... has been made compatible.

Further, after this step, a photoelectric conversion device was fabricated by forming an ITO or aluminum metal film with a thickness of 600 to 800 μm by vacuum evaporation. Figure 4 (A) shows the conversion efficiency.
Shown below.

With a cell size of x cm, M 1 (l OOmW/c
If pretreatment 00) is not included under the conditions of j), Qυ is 3-
However, when pretreatment was performed again, a value of 00) was obtained. Furthermore, by adding the intermediate step 06), (6) was obtained when no addition was made to the A14- capture (60) of run L ((Production 1) nose).

(60) can obtain an efficiency of 11 to 9 inches, whereas when the method of the present invention is not used, there is no efficiency of 1 to 4 inches.

Furthermore, if this cell area is xooem'', the efficiency of 7 to 9 cm can be obtained using the method of the present invention, whereas it was 0 to 391 + without using the method of the present invention.Especially for cells without diode characteristics. 9. has a diameter of 30 inches or more and is impossible to manufacture.

FIG. 4 φ) shows the value of electrical conductivity when a type 1 silicon semiconductor is made in the process of making a P type semiconductor especially at the surface.

When a P-type semiconductor is produced in the pre-process and no pre-treatment is performed in the intermediate treatment method of the method of the present invention, the electrical conductivity of the beam M1 when irradiated with light is (65). In the case of dark conductivity (64), the value also varied greatly between 10 and 10.0 On the other hand, when the pretreatment of the present invention was performed, the light conductivity Q
O), dark conductivity (1d) force monitoring was obtained. When the intermediate treatment was performed, the conductivity (6) and the dark conductivity (63) were obtained. These clearly show how important it is to prevent doping effects in the present invention. As is clear from the description, the present invention is an extremely important manufacturing apparatus and device for manufacturing not only photoelectric conversion devices or light emitting devices, but also various semiconductor devices such as field effect semiconductor devices and photosensor arrays using the same reaction tube. This method provides a manufacturing method that enables the production of non-single-crystal semiconductor films on 100 to 500 substrates in the same amount of time as it would take to produce 4 layers of conventional vertical plasma 0M D device fllftcc1ocm. , is extremely suitable for mass production.

Furthermore, by arranging the electrode structure or substrate as in the present invention, it is possible to repeatedly and stably obtain a conversion efficiency of 10 or more in a photoelectric conversion device having a fi or PIN structure, and its film quality is also extremely excellent. It was something like that.

In the present invention, silicon carbide φiXO+-KO (x41
). However, if germane is used as a reactive gas, it is possible to obtain 5ixGe, -(0! It is also possible to obtain a P-NPIN structure, a so-called tandem structure, by using silicon and germanium silicide.

The present invention has been mainly described with reference to a horizontal glasma OVD apparatus shown in FIG. However, the present invention is also effective in plasma 0VD devices in which the electrodes are made of a dielectric type or utilize arc discharge. Furthermore, the method of the present invention can be similarly applied to vertical and rectangular Pelger type plasma 0VD apparatuses.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a plasma vapor phase apparatus of the present invention. FIG. 2 shows a part of FIG. FIG. S is a chart using the plasma vapor phase method of the present invention using the apparatus shown in FIG.

Claims (1)

[Claims] 1. When a semiconductor device having at least one junction is formed on a substrate provided in a reactor by a plasma vapor phase method, an inner wall of the reactor or a region where a semiconductor layer is formed. 1. A method for manufacturing a semiconductor device, comprising forming an intrinsic or substantially intrinsic semiconductor layer in advance. 2. In claim 1, the intrinsic or substantially intrinsic semiconductor layer is PO-10WA-P with respect to electromagnetic energy Po used for manufacturing a semiconductor device having a junction.
A method for manufacturing a semiconductor device, characterized in that the semiconductor device is formed by applying electromagnetic energy in the range of O+30W. 3. A method for manufacturing a semiconductor device according to claim 1, characterized in that the semiconductor device is manufactured in which the intrinsic or substantially intrinsic semiconductor layer has a junction.