CN112359320A - 一种用于制备掺杂非晶硅薄膜的气源 - Google Patents

一种用于制备掺杂非晶硅薄膜的气源 Download PDF

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CN112359320A
CN112359320A CN202011137583.4A CN202011137583A CN112359320A CN 112359320 A CN112359320 A CN 112359320A CN 202011137583 A CN202011137583 A CN 202011137583A CN 112359320 A CN112359320 A CN 112359320A
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上官泉元
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Jiangsu Jietai Photoelectric Technology Co ltd
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Abstract

本发明公开了一种用于制备掺杂非晶硅薄膜的气源，所述气源是灌装储存在防爆容器里的掺杂气体与惰性气体的混合气体，在使用PVD方法掺杂非晶硅镀膜过程中，防爆容器中的混合气体流经减压阀、气体流量计，以固定流量导入镀膜腔体中进行镀膜使用；其中，掺杂气体的体积浓度为1‑15％，而磷烷或硼烷经稀释后其浓度大大降低，可有效解决纯磷烷、纯硼烷等剧毒、易燃的掺杂剂在运输、装卸、储存和使用上的安全风险问题，且掺杂过程中无其它杂质气体进入非晶硅薄膜，且工厂无需专门配备用于纯硅烷或硼烷存储及使用的特种设备，工厂相应的安全设施投入降低。

Description

一种用于制备掺杂非晶硅薄膜的气源
技术领域
本发明涉及太阳能电池制备技术领域，特别涉及一种用于制备掺杂非晶硅薄膜的气源。
背景技术
在高效太阳能电池器件中，掺杂非晶硅薄膜的质量对整个太阳能电池的性能具有重要影响。掺杂非晶硅薄膜提供了场致钝化并对载流子选择性透过，与硅基底形成良好的钝化接触，使得多数载流子可以穿透钝化层，而少数载流子则被阻挡，从而实现最短的电流传输路径，极大地降低了传输电阻，从根本上消除了电流横向传输引起的损失，提升了太阳能电池的电流和填充因子。
目前，已有的非晶硅材料，尤其是PVD方法沉积掺杂非晶硅，大多采用磷烷或硼烷作为掺杂剂，在等离子体作用下磷烷或硼烷分解形成高活性的P或B离子，并与由硅靶溅射出来的硅共沉积形成Si-P或Si-B合金，由此制备N型或P型非晶硅薄膜。
为降低纯磷烷、硼烷的运输、使用风险，也有使用1-2％的磷烷(硼烷)和氢气的混合气体作为掺杂源，实现掺杂非晶硅薄膜的制备。由于磷烷、硼烷属于剧毒、易燃、易爆的危险化学气体，如直接购买纯磷烷、硼烷作为气体掺杂剂用于掺杂非晶硅薄膜的生产，在运输、装卸、储存和使用方面均存在较大安全风险。若使用浓度为1-2％的磷烷(硼烷)和氢气的混合气体作为掺杂源制备掺杂非晶硅薄膜，在沉积时氢气也会掺进非晶硅，并在后续高温退火时重新溢出，在膜层中形成气泡等缺陷，导致太阳能电池的性能和外观下降。
发明内容
为解决上述技术问题，本发明提供了一种用于制备掺杂非晶硅薄膜的气源，所述气源是灌装储存在防爆容器里的掺杂气体与惰性气体的混合气体，其中，掺杂气体的体积浓度为1-15％，而磷烷或硼烷经稀释后其浓度大大降低，可有效解决纯磷烷、纯硼烷等剧毒、易燃的掺杂剂在运输、装卸、储存和使用上的安全风险问题。
其中，所述掺杂气体为纯的磷烷或硼烷；所述惰性气体为氦气、氖气、氩气、氪气、氙气、氡气中的一种或多种混合。
本发明还提供了上述气源的使用方法，在掺杂非晶硅镀膜过程中，防爆容器中的混合气体流经减压阀、气体流量计，以固定流量导入镀膜腔体中进行镀膜使用。
本发明还提供了上述气源的用途，用于太阳能电池制备过程中的PVD方法沉积掺杂非晶硅。
通过上述技术方案，本发明具有如下有益效果：
1、氩气等惰性气体与磷烷或硼烷的混合气体在运输、装卸、存储和使用过程中安全风险低，镀膜时可以直接进行使用，使用方便；
2、掺杂过程中无其它杂质气体进入非晶硅薄膜；
3、相对成本低(在安全范围内尽量提高磷烷或硼烷浓度)，工厂无需专门配备用于纯硅烷或硼烷存储及使用的特种设备，工厂相应的安全设施投入降低。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述。
实施例1：
将磷烷按照10％的体积浓度与氩气进行预混合，为保证掺杂质量应精确控制混合浓度；混合后的气体进行灌装储存在防爆的容器里，如钢瓶中，然后即可进行安全有效的运输、装卸、存储和使用。
实施例2：
本实施例2基于实施例1获得的磷烷与氩气的混合气体，在PVD镀膜制备掺杂非晶硅薄膜过程中，钢瓶中的混合气体流经减压阀、气体流量计，以固定流量导入镀膜腔体中进行使用。其中，PVD镀膜工艺为：在磁控电极上装上硅靶并放置在真空腔体里，按上述方法向腔体内通入磷烷与氩气的混合气体，腔体内真空压力为0.1-2Pa，硅靶上导入DC或AC电流，在电场作用下，硅靶放电产生等离子体，等离子体中的氩气离子经电场加速后轰击硅靶，溅射产生硅原子脱离硅靶，同时，磷掺杂气体也电离分解，轰击下来的硅原子和分解的掺杂磷原子共同沉积在经过的硅片上形成磷掺杂非晶硅薄膜。
实施例3：
将硼烷按照10％的体积浓度与氩气进行预混合，为保证掺杂质量应精确控制混合浓度；混合后的气体进行灌装储存在防爆的容器里，如钢瓶中，然后即可进行安全有效的运输、装卸、存储和使用。
实施例4：
本实施例4基于实施例3获得的硼烷与氩气的混合气体，在PVD镀膜制备掺杂非晶硅薄膜过程中，钢瓶中的混合气体流经减压阀、气体流量计，以固定流量导入镀膜腔体中进行使用。其中，PVD镀膜工艺为：在磁控电极上装上硅靶并放置在真空腔体里，按上述方法向腔体内通入硼烷与氩气的混合气体，腔体内真空压力为0.1-2Pa，硅靶上导入DC或AC电流，在电场作用下，硅靶放电产生等离子体，等离子体中的氩气离子经电场加速后轰击硅靶，溅射产生硅原子脱离硅靶，同时，硼掺杂气体也电离分解，轰击下来的硅原子和分解的掺杂硼原子共同沉积在经过的硅片上形成硼掺杂非晶硅薄膜。
本发明通过将氩气等惰性气体与磷烷或硼烷进行混合后并灌装储存在防爆的容器里，在运输、装卸、存储和使用过程中安全风险低，镀膜时可以直接进行使用，使用方便；在进行PVD等工艺时，掺杂过程中无其它杂质气体进入非晶硅薄膜；工厂无需专门配备用于纯硅烷或硼烷存储及使用的特种设备，工厂相应的安全设施投入降低。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对上述实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (5)

1.一种用于制备掺杂非晶硅薄膜的气源，其特征在于，所述气源是灌装储存在防爆容器里的掺杂气体与惰性气体的混合气体，其中，掺杂气体的体积浓度为1-15％。
2.根据权利要求1所述的一种用于制备掺杂非晶硅薄膜的气源，其特征在于，所述掺杂气体为纯的磷烷或纯的硼烷。
3.根据权利要求1所述的一种用于制备掺杂非晶硅薄膜的气源，其特征在于，所述惰性气体为氦气、氖气、氩气、氪气、氙气、氡气中的一种或多种混合。
4.一种权利要求1-3任一项所述气源的使用方法，其特征在于，在掺杂非晶硅镀膜过程中，防爆容器中的混合气体流经减压阀、气体流量计，以固定流量导入镀膜腔体中进行镀膜使用。
5.一种权利要求1-3任一项所述气源的用途，其特征在于，用于太阳能电池制备过程中的PVD方法沉积掺杂非晶硅。
CN202011137583.4A 2020-10-22 2020-10-22 一种用于制备掺杂非晶硅薄膜的气源 Pending CN112359320A (zh)

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