JPS5891028A - β型炭化ケイ素粉末の製造方法 - Google Patents
β型炭化ケイ素粉末の製造方法Info
- Publication number
- JPS5891028A JPS5891028A JP56188847A JP18884781A JPS5891028A JP S5891028 A JPS5891028 A JP S5891028A JP 56188847 A JP56188847 A JP 56188847A JP 18884781 A JP18884781 A JP 18884781A JP S5891028 A JPS5891028 A JP S5891028A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- silicon carbide
- carbon
- silica
- carbide powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- 238000010304 firing Methods 0.000 claims description 10
- 239000011812 mixed powder Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 abstract description 6
- 238000001354 calcination Methods 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000005051 trimethylchlorosilane Substances 0.000 description 2
- -1 155 Below 0 tl' Chemical compound 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical group C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56188847A JPS5891028A (ja) | 1981-11-25 | 1981-11-25 | β型炭化ケイ素粉末の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56188847A JPS5891028A (ja) | 1981-11-25 | 1981-11-25 | β型炭化ケイ素粉末の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5891028A true JPS5891028A (ja) | 1983-05-30 |
JPH0313166B2 JPH0313166B2 (en, 2012) | 1991-02-21 |
Family
ID=16230876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56188847A Granted JPS5891028A (ja) | 1981-11-25 | 1981-11-25 | β型炭化ケイ素粉末の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5891028A (en, 2012) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100477949B1 (ko) * | 2001-09-14 | 2005-03-18 | 주식회사 엘지화학 | 구형 탄화규소계 화합물 및 그의 제조방법 |
JP2009269797A (ja) * | 2008-05-08 | 2009-11-19 | Sumitomo Osaka Cement Co Ltd | 炭化ケイ素粉末の製造方法 |
CN103553043A (zh) * | 2013-09-30 | 2014-02-05 | 陕西科技大学 | 一种制备高比表面积SiC纳米微球的方法 |
-
1981
- 1981-11-25 JP JP56188847A patent/JPS5891028A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100477949B1 (ko) * | 2001-09-14 | 2005-03-18 | 주식회사 엘지화학 | 구형 탄화규소계 화합물 및 그의 제조방법 |
JP2009269797A (ja) * | 2008-05-08 | 2009-11-19 | Sumitomo Osaka Cement Co Ltd | 炭化ケイ素粉末の製造方法 |
CN103553043A (zh) * | 2013-09-30 | 2014-02-05 | 陕西科技大学 | 一种制备高比表面积SiC纳米微球的方法 |
CN103553043B (zh) * | 2013-09-30 | 2015-04-22 | 陕西科技大学 | 一种制备高比表面积SiC 纳米微球的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0313166B2 (en, 2012) | 1991-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5850929B2 (ja) | 炭化ケイ素粉末の製造方法 | |
US4117095A (en) | Method of making α type silicon nitride powder | |
JPH0134925B2 (en, 2012) | ||
JPS61151006A (ja) | 窒化アルミニウム質粉末の製造方法 | |
US4619905A (en) | Process for the synthesis of silicon nitride | |
JPS5891028A (ja) | β型炭化ケイ素粉末の製造方法 | |
JPH0647447B2 (ja) | 窒化アルミニウム粉末の製造方法 | |
JPS5839764B2 (ja) | 窒化アルミニウム質粉末の製造方法 | |
JPS6212663A (ja) | B4c質複合体およびその製造方法 | |
WO1989008086A1 (en) | HIGH-STRENGTH, beta-TYPE SILICON CARBIDE SINTER AND PROCESS FOR ITS PRODUCTION | |
JPS5891019A (ja) | 窒化アルミニウム質粉末の製造方法 | |
JPS61168514A (ja) | 易焼結性炭化珪素の製造方法 | |
JPH02180710A (ja) | 微粉状αまたはβ炭化ケイ素の製造方法 | |
JPS61242905A (ja) | α型窒化ケイ素粉末の製造方法 | |
JPS6259599A (ja) | 窒化ケイ素と酸窒化ケイ素よりなる繊維状集合体の製造法 | |
JPS61201608A (ja) | 高純度窒化アルミニウム粉末の製造方法 | |
JPS5891027A (ja) | 炭化ケイ素粉末の製造方法 | |
JPS6183606A (ja) | 易焼結性窒化アルミニウム質粉末の製造方法 | |
JPS61168567A (ja) | 炭化珪素焼結体の製造方法 | |
JPS6411565B2 (en, 2012) | ||
JPH11335172A (ja) | 多孔質炭化珪素焼結体の製造方法 | |
JPS61155209A (ja) | 易焼結性窒化アルミニウム粉の製造方法 | |
JPS62108770A (ja) | 炭化珪素焼結体およびその製造方法 | |
JP2635695B2 (ja) | α−窒化ケイ素粉末の製造方法 | |
JPH07165408A (ja) | 導電性炭化珪素微粉末および焼結体の製造方法 |