JPS5886723A - 半導体結晶の成長装置 - Google Patents
半導体結晶の成長装置Info
- Publication number
- JPS5886723A JPS5886723A JP18480481A JP18480481A JPS5886723A JP S5886723 A JPS5886723 A JP S5886723A JP 18480481 A JP18480481 A JP 18480481A JP 18480481 A JP18480481 A JP 18480481A JP S5886723 A JPS5886723 A JP S5886723A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- solute
- crystal
- gaas
- tanks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 16
- 239000010413 mother solution Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 6
- 238000007654 immersion Methods 0.000 abstract 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 37
- 239000012535 impurity Substances 0.000 description 12
- 238000000926 separation method Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011017 operating method Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18480481A JPS5886723A (ja) | 1981-11-18 | 1981-11-18 | 半導体結晶の成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18480481A JPS5886723A (ja) | 1981-11-18 | 1981-11-18 | 半導体結晶の成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5886723A true JPS5886723A (ja) | 1983-05-24 |
| JPH0218576B2 JPH0218576B2 (enrdf_load_stackoverflow) | 1990-04-26 |
Family
ID=16159577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18480481A Granted JPS5886723A (ja) | 1981-11-18 | 1981-11-18 | 半導体結晶の成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5886723A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59128730U (ja) * | 1983-02-18 | 1984-08-30 | 三洋電機株式会社 | 液相成長装置 |
| JPS622528A (ja) * | 1985-06-27 | 1987-01-08 | Matsushita Electric Ind Co Ltd | 液相エピタキシヤル成長溶液の製造装置 |
| US4755364A (en) * | 1986-05-29 | 1988-07-05 | Rockwell International Corporation | Liquid phase epitaxy apparatus and method |
| CN104562186A (zh) * | 2014-12-09 | 2015-04-29 | 中国科学院上海技术物理研究所 | 一种应用于液相外延生长的组合式纯化母液的方法 |
-
1981
- 1981-11-18 JP JP18480481A patent/JPS5886723A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59128730U (ja) * | 1983-02-18 | 1984-08-30 | 三洋電機株式会社 | 液相成長装置 |
| JPS622528A (ja) * | 1985-06-27 | 1987-01-08 | Matsushita Electric Ind Co Ltd | 液相エピタキシヤル成長溶液の製造装置 |
| US4755364A (en) * | 1986-05-29 | 1988-07-05 | Rockwell International Corporation | Liquid phase epitaxy apparatus and method |
| CN104562186A (zh) * | 2014-12-09 | 2015-04-29 | 中国科学院上海技术物理研究所 | 一种应用于液相外延生长的组合式纯化母液的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218576B2 (enrdf_load_stackoverflow) | 1990-04-26 |
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