JPH0428678B2 - - Google Patents
Info
- Publication number
- JPH0428678B2 JPH0428678B2 JP58157626A JP15762683A JPH0428678B2 JP H0428678 B2 JPH0428678 B2 JP H0428678B2 JP 58157626 A JP58157626 A JP 58157626A JP 15762683 A JP15762683 A JP 15762683A JP H0428678 B2 JPH0428678 B2 JP H0428678B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- raw material
- crystal growth
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15762683A JPS6051695A (ja) | 1983-08-29 | 1983-08-29 | 液相エピタキシャル結晶成長方法とその装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15762683A JPS6051695A (ja) | 1983-08-29 | 1983-08-29 | 液相エピタキシャル結晶成長方法とその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6051695A JPS6051695A (ja) | 1985-03-23 |
JPH0428678B2 true JPH0428678B2 (enrdf_load_stackoverflow) | 1992-05-14 |
Family
ID=15653837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15762683A Granted JPS6051695A (ja) | 1983-08-29 | 1983-08-29 | 液相エピタキシャル結晶成長方法とその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6051695A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63183275U (enrdf_load_stackoverflow) * | 1987-05-19 | 1988-11-25 | ||
JP4548031B2 (ja) * | 2004-07-30 | 2010-09-22 | 株式会社島津製作所 | 結晶製造方法および結晶製造装置 |
CN102732950B (zh) * | 2012-06-20 | 2015-04-15 | 常州天合光能有限公司 | 一种连续生长准单晶晶体的装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS569009B2 (enrdf_load_stackoverflow) * | 1973-08-13 | 1981-02-26 | ||
JPS515636A (en) * | 1974-07-04 | 1976-01-17 | Tokyo Gas Co Ltd | Ekitainenryono chitsusosankabutsuteihatsuseinenshohoho |
-
1983
- 1983-08-29 JP JP15762683A patent/JPS6051695A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6051695A (ja) | 1985-03-23 |
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