JPS6051695A - 液相エピタキシャル結晶成長方法とその装置 - Google Patents

液相エピタキシャル結晶成長方法とその装置

Info

Publication number
JPS6051695A
JPS6051695A JP15762683A JP15762683A JPS6051695A JP S6051695 A JPS6051695 A JP S6051695A JP 15762683 A JP15762683 A JP 15762683A JP 15762683 A JP15762683 A JP 15762683A JP S6051695 A JPS6051695 A JP S6051695A
Authority
JP
Japan
Prior art keywords
crystal growth
crystal
raw material
substrate
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15762683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0428678B2 (enrdf_load_stackoverflow
Inventor
Toshio Sagawa
佐川　敏男
Tsunehiro Unno
恒弘 海野
Shoji Kuma
隈　彰二
Junkichi Nakagawa
中川　順吉
Yoshiharu Takahashi
高橋　善春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP15762683A priority Critical patent/JPS6051695A/ja
Publication of JPS6051695A publication Critical patent/JPS6051695A/ja
Publication of JPH0428678B2 publication Critical patent/JPH0428678B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15762683A 1983-08-29 1983-08-29 液相エピタキシャル結晶成長方法とその装置 Granted JPS6051695A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15762683A JPS6051695A (ja) 1983-08-29 1983-08-29 液相エピタキシャル結晶成長方法とその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15762683A JPS6051695A (ja) 1983-08-29 1983-08-29 液相エピタキシャル結晶成長方法とその装置

Publications (2)

Publication Number Publication Date
JPS6051695A true JPS6051695A (ja) 1985-03-23
JPH0428678B2 JPH0428678B2 (enrdf_load_stackoverflow) 1992-05-14

Family

ID=15653837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15762683A Granted JPS6051695A (ja) 1983-08-29 1983-08-29 液相エピタキシャル結晶成長方法とその装置

Country Status (1)

Country Link
JP (1) JPS6051695A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183275U (enrdf_load_stackoverflow) * 1987-05-19 1988-11-25
JP2006036614A (ja) * 2004-07-30 2006-02-09 Shimadzu Corp 結晶製造方法および結晶製造装置
CN102732950A (zh) * 2012-06-20 2012-10-17 常州天合光能有限公司 一种连续生长准单晶晶体的装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039875A (enrdf_load_stackoverflow) * 1973-08-13 1975-04-12
JPS515636A (en) * 1974-07-04 1976-01-17 Tokyo Gas Co Ltd Ekitainenryono chitsusosankabutsuteihatsuseinenshohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039875A (enrdf_load_stackoverflow) * 1973-08-13 1975-04-12
JPS515636A (en) * 1974-07-04 1976-01-17 Tokyo Gas Co Ltd Ekitainenryono chitsusosankabutsuteihatsuseinenshohoho

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183275U (enrdf_load_stackoverflow) * 1987-05-19 1988-11-25
JP2006036614A (ja) * 2004-07-30 2006-02-09 Shimadzu Corp 結晶製造方法および結晶製造装置
CN102732950A (zh) * 2012-06-20 2012-10-17 常州天合光能有限公司 一种连续生长准单晶晶体的装置
CN102732950B (zh) * 2012-06-20 2015-04-15 常州天合光能有限公司 一种连续生长准单晶晶体的装置

Also Published As

Publication number Publication date
JPH0428678B2 (enrdf_load_stackoverflow) 1992-05-14

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