JPS5886702A - バリスタの製造方法 - Google Patents
バリスタの製造方法Info
- Publication number
- JPS5886702A JPS5886702A JP56186275A JP18627581A JPS5886702A JP S5886702 A JPS5886702 A JP S5886702A JP 56186275 A JP56186275 A JP 56186275A JP 18627581 A JP18627581 A JP 18627581A JP S5886702 A JPS5886702 A JP S5886702A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- film
- zno
- metal oxide
- main component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 description 8
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 strontium (Sr) Chemical class 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56186275A JPS5886702A (ja) | 1981-11-19 | 1981-11-19 | バリスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56186275A JPS5886702A (ja) | 1981-11-19 | 1981-11-19 | バリスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5886702A true JPS5886702A (ja) | 1983-05-24 |
| JPS6253923B2 JPS6253923B2 (enrdf_load_html_response) | 1987-11-12 |
Family
ID=16185440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56186275A Granted JPS5886702A (ja) | 1981-11-19 | 1981-11-19 | バリスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5886702A (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257104A (ja) * | 1984-06-01 | 1985-12-18 | 松下電器産業株式会社 | 薄膜サ−ジアブソ−バ |
| JPS63202003A (ja) * | 1987-02-17 | 1988-08-22 | 三菱マテリアル株式会社 | 薄膜バリスタの製造方法 |
| JPH02214101A (ja) * | 1989-02-14 | 1990-08-27 | Tdk Corp | 電圧非直線性抵抗素子 |
| JP2010232460A (ja) * | 2009-03-27 | 2010-10-14 | Tdk Corp | 電圧非直線性抵抗素子及びその製造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150109293A (ko) * | 2014-03-19 | 2015-10-01 | 엔지케이 인슐레이터 엘티디 | 전압 비선형 저항 소자 및 그 제조 방법 |
| TW201606814A (zh) * | 2014-03-19 | 2016-02-16 | 日本碍子股份有限公司 | 電壓非線性電阻元件及其製法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150204A (en) * | 1979-05-10 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Nonnlinear voltage resistor and method of fabricating same |
-
1981
- 1981-11-19 JP JP56186275A patent/JPS5886702A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150204A (en) * | 1979-05-10 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Nonnlinear voltage resistor and method of fabricating same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257104A (ja) * | 1984-06-01 | 1985-12-18 | 松下電器産業株式会社 | 薄膜サ−ジアブソ−バ |
| JPS63202003A (ja) * | 1987-02-17 | 1988-08-22 | 三菱マテリアル株式会社 | 薄膜バリスタの製造方法 |
| JPH02214101A (ja) * | 1989-02-14 | 1990-08-27 | Tdk Corp | 電圧非直線性抵抗素子 |
| JP2010232460A (ja) * | 2009-03-27 | 2010-10-14 | Tdk Corp | 電圧非直線性抵抗素子及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6253923B2 (enrdf_load_html_response) | 1987-11-12 |
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