JPS5884447A - 素子間配線接続方法 - Google Patents
素子間配線接続方法Info
- Publication number
- JPS5884447A JPS5884447A JP18233081A JP18233081A JPS5884447A JP S5884447 A JPS5884447 A JP S5884447A JP 18233081 A JP18233081 A JP 18233081A JP 18233081 A JP18233081 A JP 18233081A JP S5884447 A JPS5884447 A JP S5884447A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- flat
- layer
- formation
- adhered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004642 Polyimide Substances 0.000 abstract description 3
- 229920001721 polyimide Polymers 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18233081A JPS5884447A (ja) | 1981-11-16 | 1981-11-16 | 素子間配線接続方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18233081A JPS5884447A (ja) | 1981-11-16 | 1981-11-16 | 素子間配線接続方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5884447A true JPS5884447A (ja) | 1983-05-20 |
| JPH0114709B2 JPH0114709B2 (en, 2012) | 1989-03-14 |
Family
ID=16116414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18233081A Granted JPS5884447A (ja) | 1981-11-16 | 1981-11-16 | 素子間配線接続方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5884447A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59210716A (ja) * | 1983-05-13 | 1984-11-29 | Matsushita Electric Ind Co Ltd | 表面波デバイス用基板 |
| JP2009114950A (ja) * | 2007-11-06 | 2009-05-28 | Denso Corp | スタータ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629347A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Manufacture of semiconductor device |
-
1981
- 1981-11-16 JP JP18233081A patent/JPS5884447A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629347A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59210716A (ja) * | 1983-05-13 | 1984-11-29 | Matsushita Electric Ind Co Ltd | 表面波デバイス用基板 |
| JP2009114950A (ja) * | 2007-11-06 | 2009-05-28 | Denso Corp | スタータ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0114709B2 (en, 2012) | 1989-03-14 |
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