JPS588143B2 - シユウセキカイロ ノ セイゾウホウ - Google Patents

シユウセキカイロ ノ セイゾウホウ

Info

Publication number
JPS588143B2
JPS588143B2 JP48067673A JP6767373A JPS588143B2 JP S588143 B2 JPS588143 B2 JP S588143B2 JP 48067673 A JP48067673 A JP 48067673A JP 6767373 A JP6767373 A JP 6767373A JP S588143 B2 JPS588143 B2 JP S588143B2
Authority
JP
Japan
Prior art keywords
silicon oxide
wafer
molybdenum
window
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48067673A
Other languages
English (en)
Japanese (ja)
Other versions
JPS4952589A (cg-RX-API-DMAC10.html
Inventor
ジヤツク・ラクール
ジヤン・ピエール・シユア
ミシエル・モンテイエ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS4952589A publication Critical patent/JPS4952589A/ja
Publication of JPS588143B2 publication Critical patent/JPS588143B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/43—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
JP48067673A 1972-06-15 1973-06-15 シユウセキカイロ ノ セイゾウホウ Expired JPS588143B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7221657A FR2188304B1 (cg-RX-API-DMAC10.html) 1972-06-15 1972-06-15

Publications (2)

Publication Number Publication Date
JPS4952589A JPS4952589A (cg-RX-API-DMAC10.html) 1974-05-22
JPS588143B2 true JPS588143B2 (ja) 1983-02-14

Family

ID=9100271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48067673A Expired JPS588143B2 (ja) 1972-06-15 1973-06-15 シユウセキカイロ ノ セイゾウホウ

Country Status (7)

Country Link
US (1) US3930305A (cg-RX-API-DMAC10.html)
JP (1) JPS588143B2 (cg-RX-API-DMAC10.html)
DE (1) DE2330645C3 (cg-RX-API-DMAC10.html)
FR (1) FR2188304B1 (cg-RX-API-DMAC10.html)
GB (1) GB1440627A (cg-RX-API-DMAC10.html)
IT (1) IT986462B (cg-RX-API-DMAC10.html)
NL (1) NL182107C (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621332A (en) 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
DE3828812A1 (de) * 1988-08-25 1990-03-08 Fraunhofer Ges Forschung Dreidimensionale integrierte schaltung und verfahren zu deren herstellung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274453A (en) * 1961-02-20 1966-09-20 Philco Corp Semiconductor integrated structures and methods for the fabrication thereof
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices
US3667005A (en) * 1966-06-30 1972-05-30 Texas Instruments Inc Ohmic contacts for semiconductors devices
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3434020A (en) * 1966-12-30 1969-03-18 Texas Instruments Inc Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3495324A (en) * 1967-11-13 1970-02-17 Sperry Rand Corp Ohmic contact for planar devices
US3642528A (en) * 1968-06-05 1972-02-15 Matsushita Electronics Corp Semiconductor device and method of making same
US3641661A (en) * 1968-06-25 1972-02-15 Texas Instruments Inc Method of fabricating integrated circuit arrays
US3700508A (en) * 1970-06-25 1972-10-24 Gen Instrument Corp Fabrication of integrated microcircuit devices
JPS4851595A (cg-RX-API-DMAC10.html) * 1971-10-29 1973-07-19

Also Published As

Publication number Publication date
US3930305A (en) 1976-01-06
GB1440627A (en) 1976-06-23
DE2330645C3 (de) 1982-07-08
DE2330645B2 (de) 1976-11-18
DE2330645A1 (de) 1974-01-24
FR2188304B1 (cg-RX-API-DMAC10.html) 1977-07-22
NL182107B (nl) 1987-08-03
NL7308278A (cg-RX-API-DMAC10.html) 1973-12-18
NL182107C (nl) 1988-01-04
IT986462B (it) 1975-01-30
JPS4952589A (cg-RX-API-DMAC10.html) 1974-05-22
FR2188304A1 (cg-RX-API-DMAC10.html) 1974-01-18

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