JPS5880831A - 半導体装置用基板の製造方法 - Google Patents

半導体装置用基板の製造方法

Info

Publication number
JPS5880831A
JPS5880831A JP56180233A JP18023381A JPS5880831A JP S5880831 A JPS5880831 A JP S5880831A JP 56180233 A JP56180233 A JP 56180233A JP 18023381 A JP18023381 A JP 18023381A JP S5880831 A JPS5880831 A JP S5880831A
Authority
JP
Japan
Prior art keywords
substrate
layer
region
insulating film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56180233A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335822B2 (https=
Inventor
Seiichiro Kawamura
河村　誠一郎
Hajime Kamioka
上岡　元
Tsutomu Ogawa
力 小川
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56180233A priority Critical patent/JPS5880831A/ja
Publication of JPS5880831A publication Critical patent/JPS5880831A/ja
Publication of JPH0335822B2 publication Critical patent/JPH0335822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Recrystallisation Techniques (AREA)
JP56180233A 1981-11-10 1981-11-10 半導体装置用基板の製造方法 Granted JPS5880831A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10732489A Division JPH03114219A (ja) 1989-04-28 1989-04-28 半導体装置用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5880831A true JPS5880831A (ja) 1983-05-16
JPH0335822B2 JPH0335822B2 (https=) 1991-05-29

Family

ID=16079697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180233A Granted JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5880831A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012722A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 薄膜結晶形成法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6017910A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6233417A (ja) * 1985-08-07 1987-02-13 Nec Corp 半導体装置の製造方法
JPH03114219A (ja) * 1989-04-28 1991-05-15 Fujitsu Ltd 半導体装置用基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device
JPS5678495A (en) * 1979-11-29 1981-06-27 Toshiba Corp Preparation of base

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device
JPS5678495A (en) * 1979-11-29 1981-06-27 Toshiba Corp Preparation of base

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012722A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 薄膜結晶形成法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6017910A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6233417A (ja) * 1985-08-07 1987-02-13 Nec Corp 半導体装置の製造方法
JPH03114219A (ja) * 1989-04-28 1991-05-15 Fujitsu Ltd 半導体装置用基板の製造方法

Also Published As

Publication number Publication date
JPH0335822B2 (https=) 1991-05-29

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