JPS5878475A - 薄膜太陽電池 - Google Patents
薄膜太陽電池Info
- Publication number
- JPS5878475A JPS5878475A JP56177685A JP17768581A JPS5878475A JP S5878475 A JPS5878475 A JP S5878475A JP 56177685 A JP56177685 A JP 56177685A JP 17768581 A JP17768581 A JP 17768581A JP S5878475 A JPS5878475 A JP S5878475A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- amorphous silicon
- solar cell
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56177685A JPS5878475A (ja) | 1981-11-04 | 1981-11-04 | 薄膜太陽電池 |
EP89111929A EP0341756B2 (en) | 1981-11-04 | 1982-11-03 | Flexible photovoltaic device |
DE8282110122T DE3280293D1 (de) | 1981-11-04 | 1982-11-03 | Biegsame photovoltaische einrichtung. |
DE3280455T DE3280455T3 (de) | 1981-11-04 | 1982-11-03 | Biegsame photovoltaische Vorrichtung. |
EP82110122A EP0078541B1 (en) | 1981-11-04 | 1982-11-03 | Flexible photovoltaic device |
US06/439,627 US4612409A (en) | 1981-11-04 | 1982-11-04 | Flexible photovoltaic device |
US06/835,717 US4773942A (en) | 1981-11-04 | 1986-03-03 | Flexible photovoltaic device |
US07/202,608 US4875943A (en) | 1981-11-04 | 1988-06-06 | Flexible photovoltaic device |
US07/652,492 US5127964A (en) | 1981-11-04 | 1991-02-08 | Flexible photovoltaic device |
US08/192,304 US5419781A (en) | 1981-11-04 | 1994-02-04 | Flexible photovoltaic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56177685A JPS5878475A (ja) | 1981-11-04 | 1981-11-04 | 薄膜太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5878475A true JPS5878475A (ja) | 1983-05-12 |
JPH0463551B2 JPH0463551B2 (enrdf_load_stackoverflow) | 1992-10-12 |
Family
ID=16035308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56177685A Granted JPS5878475A (ja) | 1981-11-04 | 1981-11-04 | 薄膜太陽電池 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5878475A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101080A (ja) * | 1985-10-28 | 1987-05-11 | Sanyo Electric Co Ltd | 光起電力素子 |
CN110176509A (zh) * | 2019-06-13 | 2019-08-27 | 陈建义 | 一种柔性太阳能电池用新型不锈钢基板 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936435A (ja) * | 1982-08-24 | 1984-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 架空ケーブル監視装置 |
-
1981
- 1981-11-04 JP JP56177685A patent/JPS5878475A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936435A (ja) * | 1982-08-24 | 1984-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 架空ケーブル監視装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101080A (ja) * | 1985-10-28 | 1987-05-11 | Sanyo Electric Co Ltd | 光起電力素子 |
CN110176509A (zh) * | 2019-06-13 | 2019-08-27 | 陈建义 | 一种柔性太阳能电池用新型不锈钢基板 |
Also Published As
Publication number | Publication date |
---|---|
JPH0463551B2 (enrdf_load_stackoverflow) | 1992-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4162505A (en) | Inverted amorphous silicon solar cell utilizing cermet layers | |
US5736431A (en) | Method for producing thin film solar battery | |
JPS60154521A (ja) | 炭化珪素被膜作製方法 | |
US6307146B1 (en) | Amorphous silicon solar cell | |
KR100659044B1 (ko) | 산화아연 박막을 가지는 태양전지 및 그 제조 방법 | |
JPH11354820A (ja) | 光電変換素子及びその製造方法 | |
JPS6091626A (ja) | アモルフアスシリコンpin半導体装置の製造方法 | |
JPS59141278A (ja) | 光電変換素子およびその製造方法 | |
JPS5936435B2 (ja) | 薄膜太陽電池 | |
JP4067589B2 (ja) | 薄膜太陽電池の作製方法 | |
JPS6091627A (ja) | Pin形半導体装置の製造方法 | |
Semma et al. | Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction | |
JPS5878475A (ja) | 薄膜太陽電池 | |
JPS5878473A (ja) | 薄膜太陽電池 | |
JPS5892281A (ja) | 薄膜太陽電池 | |
JPS58103178A (ja) | 耐熱性薄膜太陽電池 | |
JPH01201968A (ja) | 光電変換装置 | |
JPH03165068A (ja) | 非晶質光導電素子 | |
Kühnapfel et al. | Excimer laser crystallization of a-SiC x on glass | |
JPS60210825A (ja) | 太陽電池 | |
US5073804A (en) | Method of forming semiconductor materials and barriers | |
JPH0481350B2 (enrdf_load_stackoverflow) | ||
JP2785885B2 (ja) | 光起電力素子 | |
JPH0685445B2 (ja) | 光電変換素子 | |
JPS5873167A (ja) | 薄膜太陽電池 |