JPS5878475A - Thin film solar battery - Google Patents
Thin film solar batteryInfo
- Publication number
- JPS5878475A JPS5878475A JP56177685A JP17768581A JPS5878475A JP S5878475 A JPS5878475 A JP S5878475A JP 56177685 A JP56177685 A JP 56177685A JP 17768581 A JP17768581 A JP 17768581A JP S5878475 A JPS5878475 A JP S5878475A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- amorphous silicon
- solar cell
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- 239000011888 foil Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229920006015 heat resistant resin Polymers 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 4
- 150000003376 silicon Chemical class 0.000 abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- 101100145155 Escherichia phage lambda cIII gene Proteins 0.000 description 1
- 241000519695 Ilex integra Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
本発明は金属箔上に形成した可撓性、耐熱性に富むポリ
イミド等の樹脂薄膜上に形成されたアモルファスシリコ
ン系の薄膜太陽電池に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amorphous silicon-based thin film solar cell formed on a resin thin film such as polyimide having high flexibility and heat resistance formed on a metal foil.
可撓性、耐熱性に富むポリイミド等の樹脂薄膜を素板と
して使用した太陽電池は特開昭５４−１４９４８９に記
載されている。しかるに樹脂薄膜のみを素板として使用
した場合は、デポジションによって素板がカールし、又
デポジション中の変形によシ素板が均一に加熱されない
という欠点があった。本１発明者はこれらを解決するた
め鋭意研究努力した結果本発明に到ったものである。A solar cell using a resin thin film such as polyimide which is highly flexible and heat resistant as a base plate is described in JP-A-54-149489. However, when only a resin thin film is used as a base plate, there are disadvantages in that the base plate curls during deposition, and the silicon base plate is not uniformly heated due to deformation during deposition. The inventor of the present invention has made extensive research efforts to solve these problems, and has thus arrived at the present invention.
本発明を、その実施例を示す図面に従って説明すると以
下の通りである。The present invention will be described below with reference to the drawings showing embodiments thereof.
第１図は本発明に係る薄膜太陽電池（以下、本発明電池
という）の−ｆｉ］を示す斜視図であって、この実施例
は、金属箔ｌａ上に可撓性で耐熱性を有するがリイミド
系の樹脂薄膜１ｂをコーティングした素板１の樹脂薄膜
ｌｂ側の表面にアモルファスシリコンとオーミック接触
ヲスル金属薄膜２、例えばアルミニウム、モリブデン、
ステンレス鋼を約５ＯＯ；〜１μｍの厚さに蒸着又はス
パッタして基板１０を作成し、次にプラズマグロー放電
法又はスパッタ蒸着法によりアモルファスシリコン系光
起電力素子層３を層厚０５−２μｍ程度に形成し、次に
該素子層３に対する電位障壁となり光は大部分が透過す
る光透過性電極層４、例えばＩＴＯ，５ｎ（４、又はＩ
ＴＯと８ｎＣ％の、複合層を５００−３００ＯＡ’程度
の厚さに蒸着形成し、この光透過性電極層４上にアルミ
ニウムやパラジウムからなる櫛形電極５を形成し、最後
に反射防止膜６として酸化ジルコニウム膜等を形成した
ものである。金属箔１ａは例えばアルミニウム、銅。FIG. 1 is a perspective view showing a thin-film solar cell according to the present invention (hereinafter referred to as a cell according to the present invention). A metal thin film 2, such as aluminum, molybdenum,
A substrate 10 is created by vapor depositing or sputtering stainless steel to a thickness of approximately 500 to 1 μm, and then an amorphous silicon-based photovoltaic element layer 3 is deposited to a thickness of approximately 05 to 2 μm using a plasma glow discharge method or a sputter deposition method. Next, a light-transmissive electrode layer 4, for example, ITO, 5n (4, or
A composite layer of TO and 8nC% is formed by vapor deposition to a thickness of about 500-300OA', a comb-shaped electrode 5 made of aluminum or palladium is formed on this light-transmissive electrode layer 4, and finally an antireflection film 6 is formed. A zirconium oxide film or the like is formed. The metal foil 1a is made of aluminum or copper, for example.
鉄、ニッケル、ステンレス鋼等の金属でアリ、厚みは５
μｍ〜２ｍｍ ＋望ましくは５０μｍ〜１ｍｍのものが
良い。可撓性で耐熱性を有する樹脂薄膜１ｂとしては上
記の外にポリアミドイミド系等のものも使用できる。又
、金属薄膜２としては上記）外ニアンチモン、クロム、
ニクロムのような適当力電気伝導度を有する金属を用い
ることができる。Available in metals such as iron, nickel, and stainless steel, and the thickness is 5
μm to 2 mm + preferably 50 μm to 1 mm. In addition to the above-mentioned materials, materials such as polyamide-imide may also be used as the flexible and heat-resistant resin thin film 1b. In addition, as the metal thin film 2, the above-mentioned antimony, chromium,
Metals with suitable electrical conductivity, such as nichrome, can be used.
第２図はアモルファスシリコン薄膜、オヨヒ該薄膜を主
体とするアモルファスシリコン系光起電力素子層をプラ
ズマグロー放電法又はスノ（ツタ蒸着法により形成する
真空装置の概略図である。図中８と９は電極で、１０は
基板であり、１１は所定の気体を真空容器７内に送り込
むバルブである。アモルファスシリコン系光起電力素子
層３の形成は、予め前記基板１０をその金属薄膜２側が
上になるようにして電極９上に載置したうえで、プラズ
マグロー放電法による場合は真空容器７内の真空度を一
度１〜ｌ０ＸＩＯＴｏｒｒまで減圧した後にバルブ１１
から８ｉＨ４等のガスを送シ込み減圧度を１０”５ Ｔ
ｏ ｒ ｒ程度に軽減して保持し、電極８と電極９との
間に直流電圧又は１〜数＋ＭＨｚの高周波電圧を印加し
て真空容器７内をプラズマ状態にする。このよう表状態
で数十分間保持すると基板−１０上に、膜厚が０．５〜
１μで、１０−７秒以上のキャリア寿命 １０１７７♂
以下の局在準位密度、および１ｃ）−”ａｄ’／ｖ・秒
以上のキャリア易動度を持つアモルファスシリコン薄膜
を主体とするアモルファスシリコン系光起電力素子層３
を形成することができる。FIG. 2 is a schematic diagram of a vacuum apparatus for forming an amorphous silicon-based photovoltaic device layer based on an amorphous silicon thin film by a plasma glow discharge method or an ivy vapor deposition method. 8 and 9 in the figure. is an electrode, 10 is a substrate, and 11 is a valve that sends a predetermined gas into the vacuum container 7.For forming the amorphous silicon-based photovoltaic element layer 3, the substrate 10 is placed in advance with the metal thin film 2 side facing upward. If the plasma glow discharge method is used, the degree of vacuum in the vacuum container 7 is once reduced to 1 to 10XIO Torr, and then the valve 11 is placed on the electrode 9 in such a manner that the
Inject gas such as 8iH4 from the tank and reduce the pressure to 10"5 T.
The vacuum chamber 7 is maintained at a reduced temperature of approximately 0.05 to 0.05 MHz, and a DC voltage or a high frequency voltage of 1 to several + MHz is applied between the electrodes 8 and 9 to bring the inside of the vacuum container 7 into a plasma state. When kept in this surface state for several tens of minutes, a film thickness of 0.5~
Carrier life of 10-7 seconds or more at 1μ 10177♂
An amorphous silicon-based photovoltaic element layer 3 mainly composed of an amorphous silicon thin film having the following localized level density and carrier mobility of 1c) - "ad'/v・sec or more
can be formed.
スパッター蒸着法による場合も、同様に一度１〜１０刈
０”’Ｔｏｒｒまで減圧した後に、バルブ１１からアル
ゴン等の不活性ガスと水素等との混合気体を真空容器７
内に送り込み減圧度を５×１０−８〜１Ｏ−１Ｔｏｒｒ
程度に軽減して保持し、次にターゲットを有する電極８
と前記基板１０を載置した電極９との間に直流電圧又は
１−＋数ＭＨ２の高周波電圧を印加して真空容器内をプ
ラズマ状態にする。In the case of using the sputter deposition method, the pressure is similarly reduced to 1 to 10 Torr, and then a mixed gas of an inert gas such as argon and hydrogen etc. is introduced into the vacuum container 7 from the valve 11.
The degree of reduced pressure is 5×10-8 to 1O-1Torr.
Electrode 8 with a target
A direct current voltage or a high frequency voltage of 1-+ several MH2 is applied between the electrode 9 and the electrode 9 on which the substrate 10 is placed to bring the inside of the vacuum container into a plasma state.
この際の印加電圧は約１〜３ＫＶ 、電流は１０ト３０
０献、電力は１００−３００Ｗで十分である。このよう
な状態で約６０分間保持すると、基板１０上に膜厚がＩ
Ｎ２μｍで、１０−’秒以上のキャリア寿命、１０１ン
ｄ以下の局在準位密度および１ｃ）−”−ｄ、Ｉｖ・秒
以上のキャリア易動度をもつアモルファスシリコン薄膜
を主体とするアモルファスシリコン系光起電力素子層３
を形成することができる。また第１図においてオーミッ
ク接触用金属薄膜２や、光透過性電極層４は、抵抗加熱
法、電子ビーム蒸着法、又はスパッタ法等で形成するこ
とができる。At this time, the applied voltage is about 1 to 3 KV, and the current is 10 to 30
0, power of 100-300W is sufficient. When held in this state for about 60 minutes, the film thickness on the substrate 10 increases to I.
Amorphous silicon mainly composed of an amorphous silicon thin film with a carrier lifetime of 10-' seconds or more, a local level density of less than 101nd, and a carrier mobility of 1c)-''-d, Iv-second or more at N2μm. System photovoltaic element layer 3
can be formed. Further, in FIG. 1, the ohmic contact metal thin film 2 and the light-transmitting electrode layer 4 can be formed by a resistance heating method, an electron beam evaporation method, a sputtering method, or the like.
第１図のアモルファスシリコン系光起電力素子層３は、
次の如き３層構造を有するものであることが望ま、しい
。すなわち第１の層がアモルファスシリコン内にポロン
を１０１７Ｉ以上でドープしたｐ型層であり、第２の層
が真性アモルファスシリコンの層で□あり、第３の層が
アモルファスシリコン内にリンを１０１′／／以上でド
ープしたｎ型層の３層から成るものである。なお、上記
ｐ又はｒ＋３層のうち少なくとも光照射する側に光学的
バンドギャップが約１．８５ｅＶ以上であシかつ２０℃
における電気伝導度が約１０４（Ω、ｃＩＩＩ）−”以
上であり、かつｐ−１−ｎ接合した場合の拡散電位Ｖｄ
が約１．１ｖｏｌｔｓ以上である１１１７−、□型又は
ｎ型アモルファス半導体のドープ薄膜を用いれば短絡電
流と開放電圧を大幅に改善できる。また上記ｐ又はｎ型
アモルファス半導体は、一般式ａ−８ｉ （□−ｘ）Ｃ
（ｘ）Ｉａ−８ｉ（１ｙ）Ｎｙ、ａ−８ｉ（１−ｘ、）
ＯｘＮｙ等で例示すしるアモルファスシリコンカーバイ
ト、アこれらはシリコンの水素又はフッ素化合物と炭素
又はチッ素の水素又はフッ素化合物をグロー放電分解し
て得られる。The amorphous silicon-based photovoltaic element layer 3 in FIG.
It is desirable that the material has the following three-layer structure. That is, the first layer is a p-type layer made of amorphous silicon doped with 1017I or more of phosphorus, the second layer is a layer of intrinsic amorphous silicon and the third layer is amorphous silicon doped with 101' of phosphorus. //It consists of three layers of n-type layers doped with the above. Note that at least the side to which light is irradiated of the p or r+3 layer has an optical band gap of approximately 1.85 eV or more and is heated at 20°C.
The diffusion potential Vd when the electrical conductivity is about 104 (Ω, cIII)-” or more and the p-1-n junction
By using a doped thin film of 1117-, □-type or n-type amorphous semiconductor having a voltage of about 1.1 volts or more, short circuit current and open circuit voltage can be significantly improved. The above p- or n-type amorphous semiconductor has the general formula a-8i (□-x)C
(x) Ia-8i (1y) Ny, a-8i (1-x, )
Amorphous silicon carbide, exemplified by OxNy, etc., is obtained by glow discharge decomposition of hydrogen or fluorine compounds of silicon and hydrogen or fluorine compounds of carbon or nitrogen.
前記光起電力素子層３を太陽電池として使用する場合に
は、光透過性のある白金電極やＩＴＯ電極４の側から光
を照射し、前記白金電極やＩＴＯ電極４を透過した光が
光起電力素子層３内に電子と正孔の対を発生させ、これ
ら電子、正孔が空乏層領域に到達するようにして外部に
起電力として取出せるように構成する。When the photovoltaic element layer 3 is used as a solar cell, light is irradiated from the side of the platinum electrode or ITO electrode 4 which is transparent, and the light transmitted through the platinum electrode or ITO electrode 4 is photovoltaic. The configuration is such that pairs of electrons and holes are generated in the power element layer 3, and these electrons and holes reach the depletion layer region so that they can be extracted to the outside as an electromotive force.
従来のポリイミド系等の樹脂薄膜上に形成さレタ薄膜型
の太陽電池ではアモルファスシリコン系層をデポジシ゛
−：しするとその内部応力により薄膜型の太陽電池全体
がカールし、フラットな太陽電池をえることができず、
又、デポジション中にもカールするため前記樹脂薄膜が
サセ、ブタ−上から浮きあがって、該薄膜表面の温度に
むらが生じ、均質なアモルファス層かえられないという
欠点があり、またこれを改善するためには製造設備が極
めて複雑になるという欠点があった。これに対し本発明
電池の如く金属箔と樹脂薄膜を複合した可撓性のしかも
耐熱性もある基板１０上にアモルファスシリコン系の光
起電力素子層３を形成する場合は、デポジションによる
カー、ルが全く見られず、ガラス板やステンレス板を素
板として用いる場合と同様の製造装置で高品質の薄膜太
陽電池をえることができ池の一部分を拡大した斜視図、
第２図はアモルファスシリコン薄膜および該薄膜を主体
とするアモルファスシリコン系光起電力素子層３を形成
する真空装置の概略図である。In conventional thin-film solar cells formed on a thin film of resin such as polyimide, an amorphous silicon layer is deposited: the internal stress causes the entire thin-film solar cell to curl, resulting in a flat solar cell. I can't do it,
In addition, since the resin thin film curls during deposition, the resin thin film rises from the top of the slag, causing unevenness in the temperature of the thin film surface, which has the disadvantage of not being able to form a homogeneous amorphous layer. This has the disadvantage that the manufacturing equipment becomes extremely complex. On the other hand, when an amorphous silicon-based photovoltaic element layer 3 is formed on a flexible and heat-resistant substrate 10 made of a composite of metal foil and resin thin film, as in the battery of the present invention, it is necessary to A perspective view of a portion of the pond that is enlarged, allowing a high-quality thin-film solar cell to be produced using the same manufacturing equipment as when glass plates or stainless steel plates are used as base plates.
FIG. 2 is a schematic diagram of a vacuum apparatus for forming an amorphous silicon thin film and an amorphous silicon photovoltaic element layer 3 mainly composed of the thin film.
１・・・素板、１ａ・・・金属箔、１ｂ・・・樹脂薄膜
、２・・・アモルファスシリコンとオーミック接触する
金属薄膜、３・・・アモルファスシリコン系光起電力素
子層、４・・・電位障壁をつくる光透過性電極層、５・
・・櫛型電極、６・・・反射防止膜、１０・・・基板。DESCRIPTION OF SYMBOLS 1... Base plate, 1a... Metal foil, 1b... Resin thin film, 2... Metal thin film in ohmic contact with amorphous silicon, 3... Amorphous silicon-based photovoltaic element layer, 4...・Light-transparent electrode layer that creates a potential barrier, 5.
... Comb-shaped electrode, 6... Antireflection film, 10... Substrate.
特許出願人 鐘渕化学工′ｌＬ株式°令ト出願代理人
弁理士 内田敏彦
第１図
第２ｒＩ！Ｊ
手続補正書（自発）
昭和５６年１′Ｖ＠、日
特許庁長官 殿
１、事件ノ表示 ４１８１１５６−１７７１１１６
９２、発明の名称 薄膜太陽電池
３、補正をする看
事件との関係 特許出願人
所在地 大阪市北区中之島３丁目２番４号扇 称
（０９４）鐘淵化学工ｌＩ株式会社代表看 代表
取締役 高 １） 敞を代理人
５、 補正に１す増加する発明の数 零賑 補正の
対象
明細書のｒｌｌ＃ＩＩＦ４求の範−」欄及び７、補正の
内容
ｌ 特許請求の範囲一の補正
明細書の特許請求の範Ｓを、別紙のとおり補正する・
Ｉ 発明の詳細な説明欄の補正
（１）明ｍｖｉ第４頁第１行目の、「表面に」と「アモ
」との関に。Patent applicant: Kanebuchi Chemical Industry Co., Ltd. Application agent
Patent Attorney Toshihiko Uchida Figure 1, Figure 2rI! J Procedural amendment (voluntary) 1981 1'V@, Japan Patent Office Commissioner 1, case indication 4181156-1771116
92, Title of the invention Thin-film solar cell 3, Relationship with the case for amendment Address of patent applicant 3-2-4 Ougi, Nakanoshima, Kita-ku, Osaka Name
(094) Kanebuchi Kagaku II Co., Ltd. Representative Director Takashi 1) The number of inventions will increase by 1 upon the amendment. 7. Contents of amendment l Claim S of the amended specification in claim 1 is amended as shown in the attached sheet.・I Amendment to the detailed description of the invention (1) Clearance mvi, page 4, line 1 Regarding the relationship between ``on the surface'' and ``ammo.''
「ｐ又はｎｌｌの」 という文言を挿入する。"p or nll's" Insert the phrase.
Ｉｌｌ Ｉｌｌ書＠４頁第２行Ｉ冒験に、「ルファス
シリコン」とあるのを、
「ルファス半導体」
と訂正する。Ill Book of Ill, page 4, line 2, I experiment, correct "Rufus silicon" to "Rufus semiconductor".
４１１ ＰＵ書寄集頁＄１５行＠に記載の −「ア
ルミニウム」
という文言を削除する。411 Delete the word - "aluminum" written on the PU collection page, line 15, @.
（４）同書第４頁第１６行目に、ｒ４１の金属であり、
〕とあるのを。(4) In the same book, page 4, line 16, it is an r41 metal,
] There it is.
Ｆ等のヤング率が８ Ｘ １０ｓＫＩ／ｓ−以上の金属
が↓（、」
と訂正する。Metals with a Young's modulus of 8 x 10sKI/s or more, such as F, are corrected as ↓(,''.
圏 同書第４頁第１８行目末尾に、［薄層１ｔ）Ｊとあ
るの管。Circle At the end of page 4, line 18 of the same book, there is a tube that says [thin layer 1t) J.
「薄膜１ｂＪ 七訂正する。"Thin film 1bJ Seven corrections.
（−１同書ｌｌｌ５ＪＩ第２ ｏｑｉｍｒｃ％ｒｏ、５
〜ＩＪＩＪ トアルのを。(-1 Ibid. lll5JI No. 2 oqimrc%ro, 5
~IJIJ Toal's.
ｒｏ、ｉ ＮＩＪＩＪ と訂正す為。ro, i NIJIJ To correct.
（１）−寄集６頁第３行目の、「持っ」と「アモルファ
ス」との間Ｋ。(1) - K between "mochi" and "amorphous" in the third line of page 6 of the collection.
「真性」 、という文言を挿入する。"Intrinsic" Insert the phrase .
横１Ｍ書第６頁第１７行目に１ 「１〜２μ聰」とある
のを。On the 17th line of the 6th page of the horizontal 1M book, it says 1 ``1~2μ 聰.''
「Ｏ・ｌ〜ｌ＃鵬」 と訂正する。"O・l～l#Peng" I am corrected.
１ｌｌ） 同書第６頁第１９行目の、「もり」と［ア
モルファスｊとの間に。1ll) In the same book, page 6, line 19, between "Mori" and [Amorphous j.
「真性」 という文言を挿入する。"Intrinsic" Insert the phrase.
８．添附書類
補正後の特許請求の範囲
の全文をε戟した書面（別紙） ｌ過補正後の特
許請求の範囲
の全文を記載した書面
ｌ 金ｍ箔上に可撓性で耐熱性を有する樹脂薄膜を形成
してなり素板の樹脂薄膜側表ＥｉｉＫアモルファスシリ
コンとオー々ツク接触する金属薄膜を形成して基板とな
し、＃基板上Ｋ １０”秒以上のキャリア寿命＊ １０
ｙ／ｍ”以下の局在率位置度、お１び１０”ｃｍ”／Ｖ
・秒以上のキャリア易１１１ｊ［を持り轟丘アモルファ
スシリコン薄膜を主体とする 、アモルファスシリコン
系光起電力素子層と、簡素子層に対する電位障壁を形成
する光透過性電極層とが積層されていることを特徴とす
る薄膜太陽電池。8. A document containing the full text of the claims after amending the attached documents (attached document) A document containing the full text of the claims after over-amendment A thin flexible and heat-resistant resin film on gold foil A metal thin film is formed on the resin thin film side surface of the base plate and is in direct contact with the EiiK amorphous silicon to form a substrate.
Localization rate position less than y/m", 1 and 10"cm"/V
・The amorphous silicon-based photovoltaic element layer, which has a carrier resistance of more than 111 sec and is mainly composed of a Todorooka amorphous silicon thin film, and a light-transmissive electrode layer that forms a potential barrier to the simple layer are laminated. A thin film solar cell characterized by:
！ 前記アモルファスシリコン系光起電力素子層が３層
構造を有し、第１の層がボロン等の崗期律表璽族の元素
を不純物として含むｐ１１アモルファス半導体であり、
第２の層が真性アモルファスシリコンであり、第３の層
がリン等の同期律表Ｖ族の元素を不純物として含むｎＩ
Ｉアモルファス半導体からなる特許請求の範囲１１１項
記載の薄膜太陽電池。! The amorphous silicon-based photovoltaic device layer has a three-layer structure, and the first layer is a p11 amorphous semiconductor containing an element of the granite group such as boron as an impurity,
The second layer is intrinsic amorphous silicon, and the third layer is nI containing an element of group V of the synchronous table as an impurity, such as phosphorus.
112. The thin film solar cell according to claim 111, comprising an I amorphous semiconductor.
３ 前記ｐ又ｒｊｎ！アモルファス半導体のうち、少く
とも光畷射する側のアモルファス半導体社。3 Said pmata rjn! Among amorphous semiconductors, Amorphous Semiconductor Company, at least the side that emits light.
光学的バンドギャップＫｇ−Ｏｐｔが約１．８５ ｅＶ
以上であり、かつ２０″ＣＫおけゐ電気伝導度が約１０
’（ｆｌ・ａｚ）−”以上であり、かつｐ−１−ｎ４１
合から取る前記光起電力素子層の拡散電位Ｖａが約１．
１Ｙ以上であることを特徴とする特許請求の範囲第２項
記載の薄膜太陽電池。Optical bandgap Kg-Opt is approximately 1.85 eV
or more, and the electrical conductivity is approximately 10 at 20″CK.
'(fl・az)-'' or more, and p-1-n41
When the diffusion potential Va of the photovoltaic element layer is approximately 1.
3. The thin film solar cell according to claim 2, wherein the solar cell has a thickness of 1Y or more.
４ 前記ｐ又ｔｔｎｌｉアモルファス半導体が一般式％
式％
で表わされるアモルファス半導体であることを特徴とす
る特許請求の範囲第２項又ｒｊｌ！３項記載の薄膜太陽
電池。4 The p or ttnli amorphous semiconductor has the general formula %
Claim 2 or rjl! is an amorphous semiconductor represented by the formula %. Thin film solar cell according to item 3.
ｂ 前Ｉｉ！、光透過性電極層を形成する物質がＸＴＯ
。b Mae Ii! , the material forming the light-transmissive electrode layer is XTO.
.
ａｎへ、又轄ＩテＯとｅｎｏｌとの複合層であることを
特徴とする特許請求の範囲第１）Ｊ乃至第４項に記載の
薄膜太陽電池・The thin film solar cell according to claims 1) to 4, characterized in that it is a composite layer of an, IO and enol.
Claims (1)
してなる素板の樹脂薄膜側表面にアモルファスシリコン
とオーミック接触する金属薄膜を形成して基板となし、
該基板上に１ｄ秒以上のキャリア寿命、１ｏ／ＣＩ！以
下の局在準位密度、および１ｏ−”ｄ ／ｖ・秒以上の
キャリア易動度を持つアモルファスシリコン薄膜を主体
とするアモルファスシリコン系光起電力素子層と、該素
子層に対する電位障壁を形成する光透過性電極層とが積
層されていることを特徴とする薄膜太陽電池。 ゛ ２ 前記アモルファスシリコン系光起電力素子
層が３層構造を有し、第１の層がボロン等の周期律表■
族の元素を不純物として含むｐ型アモルファス半導体で
あり、第２の層が真性アモルファスシリコンであり、第
３のＮｉｌカ９ン等の周期律表■族の元素を不純物とし
て含むｎ型アモルファス半導体から、なる特許請求の範
囲第１項記載の薄膜太陽電池。 ３ 前記ｐ又はｎ型アモルファス半導体のうち、少くと
も光照射する側のアモルファス半導体は、光学的バンド
ギャップＥｇ、ｏｐｔ が約１．８５ｅＶ以上であり
、かつ２０℃における電気伝導度が約１０ （Ω、備）
以上であり、かつｐ−１−ｎ接合から成る前記光起
電力素子層の拡散電位Ｖｄが約１．１ｖ以上であること
を特徴とする特許請求の範囲第２項記載の薄膜太陽電池
。 ４ 前記ｐ又はｎ型アモルファス半導体が一般式ａ−８
ｉ（ｘ−ｘ）Ｏｘ＋ａ−８ｉ（ｔ−ｙ）Ｎｙ＋ａ−８ｉ
（ｔ−ｒ７）Ｃ！ｘＮｙで表わされるアモルファス半導
体であることを特徴とする特許請求の範囲第２項又は第
３項記載の薄膜太陽電池。 ５ 前記光透過性電極層を形成する物質がＩＴｏ。 ８ｎＣ）＠ ＋又−１ｉＩＴｏと８ ｎＯ＠との複合層
であることを特徴とする特許請求の範囲第１項乃至第４
項に記載の薄膜太陽電池。[Scope of Claims] 1. A base plate formed by forming a flexible and heat-resistant resin thin film on a metal foil, and forming a metal thin film in ohmic contact with amorphous silicon on the surface of the resin thin film side to form a substrate,
The carrier life on the substrate is more than 1 d seconds, 1o/CI! Forming an amorphous silicon-based photovoltaic device layer mainly composed of an amorphous silicon thin film with a localized level density below and a carrier mobility of 1 o-”d/v・sec or more, and a potential barrier for the device layer. 2. The amorphous silicon-based photovoltaic element layer has a three-layer structure, and the first layer is made of a periodic material such as boron. Table■
A p-type amorphous semiconductor containing an element of group I as an impurity, the second layer is intrinsic amorphous silicon, and a third layer is an n-type amorphous semiconductor containing an element of group I of the periodic table such as Nil-9 as an impurity. The thin film solar cell according to claim 1, wherein: 3 Among the p- or n-type amorphous semiconductors, at least the amorphous semiconductor on the side to which light is irradiated has an optical band gap Eg, opt of about 1.85 eV or more, and an electrical conductivity of about 10 (Ω) at 20°C. , B)
3. The thin film solar cell according to claim 2, wherein said photovoltaic element layer having a p-1-n junction has a diffusion potential Vd of about 1.1 V or more. 4 The p- or n-type amorphous semiconductor has the general formula a-8
i(x-x)Ox+a-8i(t-y)Ny+a-8i
(t-r7)C! The thin film solar cell according to claim 2 or 3, which is an amorphous semiconductor represented by xNy. 5. The material forming the light-transmissive electrode layer is ITo. Claims 1 to 4 are characterized in that they are a composite layer of 8nC)@+or-1iITo and 8nO@.
The thin film solar cell described in Section 1.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177685A JPS5878475A (en) | 1981-11-04 | 1981-11-04 | Thin film solar battery |
| DE8282110122T DE3280293D1 (en) | 1981-11-04 | 1982-11-03 | BENDING PHOTOVOLTAIC INTERIOR. |
| DE3280455T DE3280455T3 (en) | 1981-11-04 | 1982-11-03 | Flexible photovoltaic device. |
| EP82110122A EP0078541B1 (en) | 1981-11-04 | 1982-11-03 | Flexible photovoltaic device |
| EP89111929A EP0341756B2 (en) | 1981-11-04 | 1982-11-03 | Flexible photovoltaic device |
| US06/439,627 US4612409A (en) | 1981-11-04 | 1982-11-04 | Flexible photovoltaic device |
| US06/835,717 US4773942A (en) | 1981-11-04 | 1986-03-03 | Flexible photovoltaic device |
| US07/202,608 US4875943A (en) | 1981-11-04 | 1988-06-06 | Flexible photovoltaic device |
| US07/652,492 US5127964A (en) | 1981-11-04 | 1991-02-08 | Flexible photovoltaic device |
| US08/192,304 US5419781A (en) | 1981-11-04 | 1994-02-04 | Flexible photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177685A JPS5878475A (en) | 1981-11-04 | 1981-11-04 | Thin film solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5878475A true JPS5878475A (en) | 1983-05-12 |
| JPH0463551B2 JPH0463551B2 (en) | 1992-10-12 |
Family
ID=16035308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56177685A Granted JPS5878475A (en) | 1981-11-04 | 1981-11-04 | Thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878475A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62101080A (en) * | 1985-10-28 | 1987-05-11 | Sanyo Electric Co Ltd | Photosensor |
| CN110176509A (en) * | 2019-06-13 | 2019-08-27 | 陈建义 | A kind of flexible solar battery novel stainless steel substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936435A (en) * | 1982-08-24 | 1984-02-28 | Nippon Telegr & Teleph Corp <Ntt> | System for monitoring aerial cable |
-
1981
- 1981-11-04 JP JP56177685A patent/JPS5878475A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936435A (en) * | 1982-08-24 | 1984-02-28 | Nippon Telegr & Teleph Corp <Ntt> | System for monitoring aerial cable |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62101080A (en) * | 1985-10-28 | 1987-05-11 | Sanyo Electric Co Ltd | Photosensor |
| CN110176509A (en) * | 2019-06-13 | 2019-08-27 | 陈建义 | A kind of flexible solar battery novel stainless steel substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0463551B2 (en) | 1992-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4162505A (en) | Inverted amorphous silicon solar cell utilizing cermet layers | |
| EP0002383B1 (en) | Method and apparatus for depositing semiconductor and other films | |
| JPS60154521A (en) | Manufacture of silicon carbide film | |
| US6307146B1 (en) | Amorphous silicon solar cell | |
| KR100659044B1 (en) | Solar cell with zinc oxide thin film and fabricating method thereof | |
| JPS6091626A (en) | Method of producing amorphous silicon pin semiconductor device | |
| JPS59141278A (en) | Photoelectric conversion element and manufacture thereof | |
| JPS5936435B2 (en) | thin film solar cells | |
| JPS6091627A (en) | Method of producing pin semiconductor device | |
| JPS5878475A (en) | Thin film solar battery | |
| JPS5878473A (en) | Thin film solar battery | |
| JPS5892281A (en) | Thin film solar cell | |
| JPS58103178A (en) | Heat resistant thin film solar battery | |
| JPH01201968A (en) | Photoelectric conversion device | |
| JPH03165068A (en) | Amorphous photoconductive cell | |
| JPS60210825A (en) | Solar battery | |
| US5073804A (en) | Method of forming semiconductor materials and barriers | |
| JP2978395B2 (en) | Manufacturing method of photovoltaic device | |
| JPH0481350B2 (en) | ||
| JP2785885B2 (en) | Photovoltaic element | |
| JPH0685445B2 (en) | Photoelectric conversion element | |
| JP3017394B2 (en) | Manufacturing method of photovoltaic device | |
| JP3063326B2 (en) | Solar cell and manufacturing method thereof | |
| Tajika et al. | Amorphous silicon solar cells | |
| JPS63220581A (en) | Manufacture of photoelectric conversion element |