JPS5878427A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS5878427A
JPS5878427A JP17654381A JP17654381A JPS5878427A JP S5878427 A JPS5878427 A JP S5878427A JP 17654381 A JP17654381 A JP 17654381A JP 17654381 A JP17654381 A JP 17654381A JP S5878427 A JPS5878427 A JP S5878427A
Authority
JP
Japan
Prior art keywords
gas
etching
etched
chamber
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17654381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312454B2 (enrdf_load_stackoverflow
Inventor
Toru Watanabe
徹 渡辺
Masahiro Shibagaki
柴垣　正弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17654381A priority Critical patent/JPS5878427A/ja
Publication of JPS5878427A publication Critical patent/JPS5878427A/ja
Publication of JPH0312454B2 publication Critical patent/JPH0312454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP17654381A 1981-11-05 1981-11-05 ドライエツチング方法 Granted JPS5878427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17654381A JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17654381A JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS5878427A true JPS5878427A (ja) 1983-05-12
JPH0312454B2 JPH0312454B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=16015423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17654381A Granted JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS5878427A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145624A (ja) * 1984-01-10 1985-08-01 Nec Corp パタ−ンの形成方法
JPS63250475A (ja) * 1987-03-30 1988-10-18 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン タングステンの異方性エツチング方法
EP0329586A1 (en) * 1988-02-19 1989-08-23 International Business Machines Corporation Anisotropic elective etch of nitride
JPH0294520A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH02177432A (ja) * 1988-12-28 1990-07-10 Fujitsu Ltd ドライ・エッチング方法
JPH0770511B2 (ja) * 1983-12-22 1995-07-31 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 二酸化珪素への改良された選択性を有する単結晶シリコンのためのプラズマエッチングプロセス
JP2008300478A (ja) * 2007-05-30 2008-12-11 Casio Comput Co Ltd 窒化シリコン膜のドライエッチング方法
JP2010073815A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd ドライエッチング方法
JP2011176291A (ja) * 2010-02-01 2011-09-08 Central Glass Co Ltd ドライエッチング剤
US9093388B2 (en) 2010-02-01 2015-07-28 Central Glass Company, Limited Dry etching agent and dry etching method using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method
JPS56125838A (en) * 1980-03-07 1981-10-02 Hitachi Ltd Etching method
JPS5726171A (en) * 1980-07-24 1982-02-12 Nec Corp Dry etching method for molybdenum

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method
JPS56125838A (en) * 1980-03-07 1981-10-02 Hitachi Ltd Etching method
JPS5726171A (en) * 1980-07-24 1982-02-12 Nec Corp Dry etching method for molybdenum

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770511B2 (ja) * 1983-12-22 1995-07-31 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 二酸化珪素への改良された選択性を有する単結晶シリコンのためのプラズマエッチングプロセス
JPS60145624A (ja) * 1984-01-10 1985-08-01 Nec Corp パタ−ンの形成方法
JPS63250475A (ja) * 1987-03-30 1988-10-18 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン タングステンの異方性エツチング方法
EP0329586A1 (en) * 1988-02-19 1989-08-23 International Business Machines Corporation Anisotropic elective etch of nitride
JPH0294520A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH02177432A (ja) * 1988-12-28 1990-07-10 Fujitsu Ltd ドライ・エッチング方法
JP2008300478A (ja) * 2007-05-30 2008-12-11 Casio Comput Co Ltd 窒化シリコン膜のドライエッチング方法
JP2010073815A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd ドライエッチング方法
JP2011176291A (ja) * 2010-02-01 2011-09-08 Central Glass Co Ltd ドライエッチング剤
US9093388B2 (en) 2010-02-01 2015-07-28 Central Glass Company, Limited Dry etching agent and dry etching method using the same
US9230821B2 (en) 2010-02-01 2016-01-05 Central Glass Company, Limited Dry etching agent and dry etching method using the same

Also Published As

Publication number Publication date
JPH0312454B2 (enrdf_load_stackoverflow) 1991-02-20

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