JPH0312454B2 - - Google Patents

Info

Publication number
JPH0312454B2
JPH0312454B2 JP56176543A JP17654381A JPH0312454B2 JP H0312454 B2 JPH0312454 B2 JP H0312454B2 JP 56176543 A JP56176543 A JP 56176543A JP 17654381 A JP17654381 A JP 17654381A JP H0312454 B2 JPH0312454 B2 JP H0312454B2
Authority
JP
Japan
Prior art keywords
etching
gas
etched
sio
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56176543A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5878427A (ja
Inventor
Tooru Watanabe
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17654381A priority Critical patent/JPS5878427A/ja
Publication of JPS5878427A publication Critical patent/JPS5878427A/ja
Publication of JPH0312454B2 publication Critical patent/JPH0312454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP17654381A 1981-11-05 1981-11-05 ドライエツチング方法 Granted JPS5878427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17654381A JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17654381A JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS5878427A JPS5878427A (ja) 1983-05-12
JPH0312454B2 true JPH0312454B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=16015423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17654381A Granted JPS5878427A (ja) 1981-11-05 1981-11-05 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS5878427A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468285A (en) * 1983-12-22 1984-08-28 Advanced Micro Devices, Inc. Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide
JPS60145624A (ja) * 1984-01-10 1985-08-01 Nec Corp パタ−ンの形成方法
US4786360A (en) * 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
JPH0294520A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH02177432A (ja) * 1988-12-28 1990-07-10 Fujitsu Ltd ドライ・エッチング方法
JP4925314B2 (ja) * 2007-05-30 2012-04-25 カシオ計算機株式会社 窒化シリコン膜のドライエッチング方法および薄膜トランジスタの製造方法
JP5264383B2 (ja) * 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
JP5862012B2 (ja) * 2010-02-01 2016-02-16 セントラル硝子株式会社 ドライエッチング剤及びドライエッチング方法
KR101422155B1 (ko) 2010-02-01 2014-07-22 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제 및 그것을 사용한 드라이 에칭 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method
JPS56125838A (en) * 1980-03-07 1981-10-02 Hitachi Ltd Etching method
JPS5726171A (en) * 1980-07-24 1982-02-12 Nec Corp Dry etching method for molybdenum

Also Published As

Publication number Publication date
JPS5878427A (ja) 1983-05-12

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