JPH0121230B2 - - Google Patents

Info

Publication number
JPH0121230B2
JPH0121230B2 JP56199492A JP19949281A JPH0121230B2 JP H0121230 B2 JPH0121230 B2 JP H0121230B2 JP 56199492 A JP56199492 A JP 56199492A JP 19949281 A JP19949281 A JP 19949281A JP H0121230 B2 JPH0121230 B2 JP H0121230B2
Authority
JP
Japan
Prior art keywords
etching
ccl
gas
plasma
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56199492A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58100683A (ja
Inventor
Masakatsu Kimizuka
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP19949281A priority Critical patent/JPS58100683A/ja
Publication of JPS58100683A publication Critical patent/JPS58100683A/ja
Publication of JPH0121230B2 publication Critical patent/JPH0121230B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP19949281A 1981-12-12 1981-12-12 プラズマエツチング方法 Granted JPS58100683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19949281A JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19949281A JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Publications (2)

Publication Number Publication Date
JPS58100683A JPS58100683A (ja) 1983-06-15
JPH0121230B2 true JPH0121230B2 (enrdf_load_stackoverflow) 1989-04-20

Family

ID=16408708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19949281A Granted JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Country Status (1)

Country Link
JP (1) JPS58100683A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043829A (ja) * 1983-08-19 1985-03-08 Anelva Corp ドライエッチング方法
JPS60165725A (ja) * 1984-02-08 1985-08-28 Toshiba Corp ドライエツチング方法
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
JPS6191928A (ja) * 1984-10-11 1986-05-10 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0727889B2 (ja) * 1985-08-27 1995-03-29 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション プラズマ・エツチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
JPS5658972A (en) * 1979-10-16 1981-05-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5681678A (en) * 1979-12-05 1981-07-03 Toshiba Corp Method and apparatus for plasma etching

Also Published As

Publication number Publication date
JPS58100683A (ja) 1983-06-15

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