JPS58100683A - プラズマエツチング方法 - Google Patents
プラズマエツチング方法Info
- Publication number
- JPS58100683A JPS58100683A JP19949281A JP19949281A JPS58100683A JP S58100683 A JPS58100683 A JP S58100683A JP 19949281 A JP19949281 A JP 19949281A JP 19949281 A JP19949281 A JP 19949281A JP S58100683 A JPS58100683 A JP S58100683A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- etched
- electrode
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000001020 plasma etching Methods 0.000 title claims description 13
- 238000005530 etching Methods 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims description 31
- 239000012495 reaction gas Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 4
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 abstract 2
- 235000019404 dichlorodifluoromethane Nutrition 0.000 abstract 2
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 abstract 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 101100536577 Caenorhabditis elegans cct-4 gene Proteins 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19949281A JPS58100683A (ja) | 1981-12-12 | 1981-12-12 | プラズマエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19949281A JPS58100683A (ja) | 1981-12-12 | 1981-12-12 | プラズマエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100683A true JPS58100683A (ja) | 1983-06-15 |
| JPH0121230B2 JPH0121230B2 (enrdf_load_stackoverflow) | 1989-04-20 |
Family
ID=16408708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19949281A Granted JPS58100683A (ja) | 1981-12-12 | 1981-12-12 | プラズマエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100683A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043829A (ja) * | 1983-08-19 | 1985-03-08 | Anelva Corp | ドライエッチング方法 |
| JPS60165725A (ja) * | 1984-02-08 | 1985-08-28 | Toshiba Corp | ドライエツチング方法 |
| JPS6126225A (ja) * | 1984-07-06 | 1986-02-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 反応性イオン・エツチング方法 |
| JPS6191928A (ja) * | 1984-10-11 | 1986-05-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6252932A (ja) * | 1985-08-27 | 1987-03-07 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | プラズマ・エツチング方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS5658972A (en) * | 1979-10-16 | 1981-05-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method |
| JPS5681678A (en) * | 1979-12-05 | 1981-07-03 | Toshiba Corp | Method and apparatus for plasma etching |
-
1981
- 1981-12-12 JP JP19949281A patent/JPS58100683A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS5658972A (en) * | 1979-10-16 | 1981-05-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method |
| JPS5681678A (en) * | 1979-12-05 | 1981-07-03 | Toshiba Corp | Method and apparatus for plasma etching |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043829A (ja) * | 1983-08-19 | 1985-03-08 | Anelva Corp | ドライエッチング方法 |
| JPS60165725A (ja) * | 1984-02-08 | 1985-08-28 | Toshiba Corp | ドライエツチング方法 |
| JPS6126225A (ja) * | 1984-07-06 | 1986-02-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 反応性イオン・エツチング方法 |
| JPS6191928A (ja) * | 1984-10-11 | 1986-05-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6252932A (ja) * | 1985-08-27 | 1987-03-07 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | プラズマ・エツチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121230B2 (enrdf_load_stackoverflow) | 1989-04-20 |
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