JPS5873136A - 半導体デバイスの製造方法 - Google Patents
半導体デバイスの製造方法Info
- Publication number
- JPS5873136A JPS5873136A JP57177460A JP17746082A JPS5873136A JP S5873136 A JPS5873136 A JP S5873136A JP 57177460 A JP57177460 A JP 57177460A JP 17746082 A JP17746082 A JP 17746082A JP S5873136 A JPS5873136 A JP S5873136A
- Authority
- JP
- Japan
- Prior art keywords
- metallization
- metallization process
- metallized
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000001465 metallisation Methods 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE313406696 | 1981-10-13 | ||
| DE19813140669 DE3140669A1 (de) | 1981-10-13 | 1981-10-13 | Verfahren zum herstellen von halbleitervorrichtungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5873136A true JPS5873136A (ja) | 1983-05-02 |
Family
ID=6144015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57177460A Pending JPS5873136A (ja) | 1981-10-13 | 1982-10-08 | 半導体デバイスの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0079459B1 (de) |
| JP (1) | JPS5873136A (de) |
| DE (2) | DE3140669A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611076B2 (ja) * | 1985-10-08 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
| EP0225224A3 (de) * | 1985-10-29 | 1987-11-19 | Thomson Components-Mostek Corporation | Ablagerung von Oxid nach einem Metallegierungsverfahren |
| JPS63160328A (ja) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| EP0533254A3 (en) * | 1991-09-19 | 1993-06-23 | N.V. Philips' Gloeilampenfabrieken | Method of manufacturing a semiconductor device whereby a layer comprising aluminium is deposited on a surface for a semiconductor body |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
| JPS5334484A (en) * | 1976-09-10 | 1978-03-31 | Toshiba Corp | Forming method for multi layer wiring |
| JPS56105654A (en) * | 1980-01-28 | 1981-08-22 | Mitsubishi Electric Corp | Semiconductor device |
-
1981
- 1981-10-13 DE DE19813140669 patent/DE3140669A1/de not_active Withdrawn
-
1982
- 1982-10-07 EP EP82109295A patent/EP0079459B1/de not_active Expired
- 1982-10-07 DE DE8282109295T patent/DE3271028D1/de not_active Expired
- 1982-10-08 JP JP57177460A patent/JPS5873136A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0079459B1 (de) | 1986-05-07 |
| EP0079459A2 (de) | 1983-05-25 |
| DE3271028D1 (en) | 1986-06-12 |
| DE3140669A1 (de) | 1983-04-28 |
| EP0079459A3 (en) | 1984-06-06 |
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