JPS6262056B2 - - Google Patents
Info
- Publication number
- JPS6262056B2 JPS6262056B2 JP55178504A JP17850480A JPS6262056B2 JP S6262056 B2 JPS6262056 B2 JP S6262056B2 JP 55178504 A JP55178504 A JP 55178504A JP 17850480 A JP17850480 A JP 17850480A JP S6262056 B2 JPS6262056 B2 JP S6262056B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- metal
- tantalum
- opening
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007743 anodising Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17850480A JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17850480A JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57102053A JPS57102053A (en) | 1982-06-24 |
| JPS6262056B2 true JPS6262056B2 (de) | 1987-12-24 |
Family
ID=16049613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17850480A Granted JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102053A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63187759U (de) * | 1987-05-25 | 1988-12-01 | ||
| JPH0238552U (de) * | 1988-09-06 | 1990-03-14 | ||
| JPH03172656A (ja) * | 1989-11-30 | 1991-07-26 | Nissan Motor Co Ltd | Ｖベルト式無段変速機の可動ディスク |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246559A (ja) * | 1985-08-26 | 1987-02-28 | Tech Res & Dev Inst Of Japan Def Agency | 撮像デバイス用電極の製造方法 |
| US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943574A (de) * | 1972-08-30 | 1974-04-24 |
-
1980
- 1980-12-17 JP JP17850480A patent/JPS57102053A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943574A (de) * | 1972-08-30 | 1974-04-24 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63187759U (de) * | 1987-05-25 | 1988-12-01 | ||
| JPH0238552U (de) * | 1988-09-06 | 1990-03-14 | ||
| JPH03172656A (ja) * | 1989-11-30 | 1991-07-26 | Nissan Motor Co Ltd | Ｖベルト式無段変速機の可動ディスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57102053A (en) | 1982-06-24 |
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