JPS5870567A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5870567A JPS5870567A JP56169070A JP16907081A JPS5870567A JP S5870567 A JPS5870567 A JP S5870567A JP 56169070 A JP56169070 A JP 56169070A JP 16907081 A JP16907081 A JP 16907081A JP S5870567 A JPS5870567 A JP S5870567A
- Authority
- JP
- Japan
- Prior art keywords
- rom
- eye
- gate
- film
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 238000005468 ion implantation Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 241001494106 Stenotomus chrysops Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169070A JPS5870567A (ja) | 1981-10-22 | 1981-10-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169070A JPS5870567A (ja) | 1981-10-22 | 1981-10-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5870567A true JPS5870567A (ja) | 1983-04-27 |
| JPH0328833B2 JPH0328833B2 (enrdf_load_stackoverflow) | 1991-04-22 |
Family
ID=15879764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169070A Granted JPS5870567A (ja) | 1981-10-22 | 1981-10-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870567A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6212152A (ja) * | 1985-07-09 | 1987-01-21 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
| JPS63202061A (ja) * | 1987-02-17 | 1988-08-22 | Nec Corp | 半導体記憶装置 |
| JPH02209767A (ja) * | 1989-02-09 | 1990-08-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| KR100401004B1 (ko) * | 2001-08-27 | 2003-10-10 | 동부전자 주식회사 | 마스크롬 구조 및 그의 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4859783A (enrdf_load_stackoverflow) * | 1971-11-25 | 1973-08-22 | ||
| JPS5553454A (en) * | 1978-10-16 | 1980-04-18 | Fujitsu Ltd | Method for producing semiconductor device |
-
1981
- 1981-10-22 JP JP56169070A patent/JPS5870567A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4859783A (enrdf_load_stackoverflow) * | 1971-11-25 | 1973-08-22 | ||
| JPS5553454A (en) * | 1978-10-16 | 1980-04-18 | Fujitsu Ltd | Method for producing semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6212152A (ja) * | 1985-07-09 | 1987-01-21 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
| JPS63202061A (ja) * | 1987-02-17 | 1988-08-22 | Nec Corp | 半導体記憶装置 |
| JPH02209767A (ja) * | 1989-02-09 | 1990-08-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| KR100401004B1 (ko) * | 2001-08-27 | 2003-10-10 | 동부전자 주식회사 | 마스크롬 구조 및 그의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328833B2 (enrdf_load_stackoverflow) | 1991-04-22 |
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