JPS5867058A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5867058A
JPS5867058A JP56165338A JP16533881A JPS5867058A JP S5867058 A JPS5867058 A JP S5867058A JP 56165338 A JP56165338 A JP 56165338A JP 16533881 A JP16533881 A JP 16533881A JP S5867058 A JPS5867058 A JP S5867058A
Authority
JP
Japan
Prior art keywords
resistance
relative ratio
resistors
resistor
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56165338A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226789B2 (enrdf_load_html_response
Inventor
Atsushi Kishi
岸　淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56165338A priority Critical patent/JPS5867058A/ja
Priority to DE8282104644T priority patent/DE3273527D1/de
Priority to EP82104644A priority patent/EP0066263B2/en
Publication of JPS5867058A publication Critical patent/JPS5867058A/ja
Priority to US06/867,422 priority patent/US4725876A/en
Publication of JPH0226789B2 publication Critical patent/JPH0226789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP56165338A 1981-05-27 1981-10-16 半導体装置 Granted JPS5867058A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56165338A JPS5867058A (ja) 1981-10-16 1981-10-16 半導体装置
DE8282104644T DE3273527D1 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
EP82104644A EP0066263B2 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
US06/867,422 US4725876A (en) 1981-05-27 1986-05-15 Semiconductor device having at least two resistors with high resistance values

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56165338A JPS5867058A (ja) 1981-10-16 1981-10-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS5867058A true JPS5867058A (ja) 1983-04-21
JPH0226789B2 JPH0226789B2 (enrdf_load_html_response) 1990-06-12

Family

ID=15810432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56165338A Granted JPS5867058A (ja) 1981-05-27 1981-10-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS5867058A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182860A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体集積回路装置
JPS6179249A (ja) * 1984-09-26 1986-04-22 Nec Corp 半導体装置
JPS61106047U (enrdf_load_html_response) * 1984-12-19 1986-07-05

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182860A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体集積回路装置
JPS6179249A (ja) * 1984-09-26 1986-04-22 Nec Corp 半導体装置
JPS61106047U (enrdf_load_html_response) * 1984-12-19 1986-07-05

Also Published As

Publication number Publication date
JPH0226789B2 (enrdf_load_html_response) 1990-06-12

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