JPS5864070A - フツ素を含むアモルフアスシリコン太陽電池 - Google Patents

フツ素を含むアモルフアスシリコン太陽電池

Info

Publication number
JPS5864070A
JPS5864070A JP56163684A JP16368481A JPS5864070A JP S5864070 A JPS5864070 A JP S5864070A JP 56163684 A JP56163684 A JP 56163684A JP 16368481 A JP16368481 A JP 16368481A JP S5864070 A JPS5864070 A JP S5864070A
Authority
JP
Japan
Prior art keywords
layer
solar cell
type
amorphous silicon
intrinsic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56163684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0121634B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Hamakawa
圭弘 浜川
Yoshihisa Owada
善久 太和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56163684A priority Critical patent/JPS5864070A/ja
Publication of JPS5864070A publication Critical patent/JPS5864070A/ja
Publication of JPH0121634B2 publication Critical patent/JPH0121634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP56163684A 1981-10-13 1981-10-13 フツ素を含むアモルフアスシリコン太陽電池 Granted JPS5864070A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163684A JPS5864070A (ja) 1981-10-13 1981-10-13 フツ素を含むアモルフアスシリコン太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163684A JPS5864070A (ja) 1981-10-13 1981-10-13 フツ素を含むアモルフアスシリコン太陽電池

Publications (2)

Publication Number Publication Date
JPS5864070A true JPS5864070A (ja) 1983-04-16
JPH0121634B2 JPH0121634B2 (enrdf_load_stackoverflow) 1989-04-21

Family

ID=15778628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163684A Granted JPS5864070A (ja) 1981-10-13 1981-10-13 フツ素を含むアモルフアスシリコン太陽電池

Country Status (1)

Country Link
JP (1) JPS5864070A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01278782A (ja) * 1988-05-02 1989-11-09 Mitsui Toatsu Chem Inc 光起電力素子の製造方法
JPH01280365A (ja) * 1988-05-06 1989-11-10 Mitsui Toatsu Chem Inc 光電変換素子
JPH01280366A (ja) * 1988-05-06 1989-11-10 Mitsui Toatsu Chem Inc 光起電力素子
US5032884A (en) * 1985-11-05 1991-07-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor pin device with interlayer or dopant gradient
JPH03177077A (ja) * 1989-12-06 1991-08-01 Canon Inc アモルファスシリコン系ｐｉｎ型光電変換素子
EP0898303A3 (en) * 1997-08-22 1999-04-07 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Electric isolating thin film system with defined residual conduction

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032884A (en) * 1985-11-05 1991-07-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor pin device with interlayer or dopant gradient
JPH01278782A (ja) * 1988-05-02 1989-11-09 Mitsui Toatsu Chem Inc 光起電力素子の製造方法
JPH01280365A (ja) * 1988-05-06 1989-11-10 Mitsui Toatsu Chem Inc 光電変換素子
JPH01280366A (ja) * 1988-05-06 1989-11-10 Mitsui Toatsu Chem Inc 光起電力素子
JPH03177077A (ja) * 1989-12-06 1991-08-01 Canon Inc アモルファスシリコン系ｐｉｎ型光電変換素子
EP0898303A3 (en) * 1997-08-22 1999-04-07 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Electric isolating thin film system with defined residual conduction

Also Published As

Publication number Publication date
JPH0121634B2 (enrdf_load_stackoverflow) 1989-04-21

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