JPS5858756A - 集積回路半導体装置 - Google Patents
集積回路半導体装置Info
- Publication number
- JPS5858756A JPS5858756A JP57158266A JP15826682A JPS5858756A JP S5858756 A JPS5858756 A JP S5858756A JP 57158266 A JP57158266 A JP 57158266A JP 15826682 A JP15826682 A JP 15826682A JP S5858756 A JPS5858756 A JP S5858756A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- transistor
- integrated circuit
- dielectric
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 230000015654 memory Effects 0.000 claims description 34
- 230000015556 catabolic process Effects 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 22
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 210000003323 beak Anatomy 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8117321A FR2512999A1 (fr) | 1981-09-14 | 1981-09-14 | Dispositif semiconducteur formant memoire morte programmable a transistors |
| FR8117321 | 1981-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5858756A true JPS5858756A (ja) | 1983-04-07 |
Family
ID=9262121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57158266A Pending JPS5858756A (ja) | 1981-09-14 | 1982-09-13 | 集積回路半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5858756A (enrdf_load_stackoverflow) |
| DE (1) | DE3232492A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2512999A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2105906B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2437107A (en) * | 2006-04-13 | 2007-10-17 | Sharp Kk | Programmable read-only memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119486A (enrdf_load_stackoverflow) * | 1974-08-08 | 1976-02-16 | Fujitsu Ltd | |
| JPS53143186A (en) * | 1977-05-20 | 1978-12-13 | Fujitsu Ltd | Production of semiconductor device |
| JPS5633875A (en) * | 1979-08-28 | 1981-04-04 | Sony Corp | Manufacture of transistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
| US3972754A (en) * | 1975-05-30 | 1976-08-03 | Ibm Corporation | Method for forming dielectric isolation in integrated circuits |
| FR2369652A1 (fr) * | 1976-10-29 | 1978-05-26 | Radiotechnique Compelec | Memoire morte programmable a transistors |
| US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
| JPS6032983B2 (ja) * | 1977-09-12 | 1985-07-31 | 株式会社日立製作所 | 接合破壊型プログラマブルｒｏｍ |
-
1981
- 1981-09-14 FR FR8117321A patent/FR2512999A1/fr active Granted
-
1982
- 1982-09-01 DE DE19823232492 patent/DE3232492A1/de not_active Ceased
- 1982-09-10 GB GB08225820A patent/GB2105906B/en not_active Expired
- 1982-09-13 JP JP57158266A patent/JPS5858756A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119486A (enrdf_load_stackoverflow) * | 1974-08-08 | 1976-02-16 | Fujitsu Ltd | |
| JPS53143186A (en) * | 1977-05-20 | 1978-12-13 | Fujitsu Ltd | Production of semiconductor device |
| JPS5633875A (en) * | 1979-08-28 | 1981-04-04 | Sony Corp | Manufacture of transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2512999A1 (fr) | 1983-03-18 |
| FR2512999B1 (enrdf_load_stackoverflow) | 1983-10-28 |
| GB2105906A (en) | 1983-03-30 |
| GB2105906B (en) | 1985-04-17 |
| DE3232492A1 (de) | 1983-04-07 |
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