GB2105906B - Fusible transister prom - Google Patents

Fusible transister prom

Info

Publication number
GB2105906B
GB2105906B GB08225820A GB8225820A GB2105906B GB 2105906 B GB2105906 B GB 2105906B GB 08225820 A GB08225820 A GB 08225820A GB 8225820 A GB8225820 A GB 8225820A GB 2105906 B GB2105906 B GB 2105906B
Authority
GB
United Kingdom
Prior art keywords
transister
fusible
prom
transister prom
fusible transister
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08225820A
Other languages
English (en)
Other versions
GB2105906A (en
Inventor
Claude Chapron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2105906A publication Critical patent/GB2105906A/en
Application granted granted Critical
Publication of GB2105906B publication Critical patent/GB2105906B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
GB08225820A 1981-09-14 1982-09-10 Fusible transister prom Expired GB2105906B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8117321A FR2512999A1 (fr) 1981-09-14 1981-09-14 Dispositif semiconducteur formant memoire morte programmable a transistors

Publications (2)

Publication Number Publication Date
GB2105906A GB2105906A (en) 1983-03-30
GB2105906B true GB2105906B (en) 1985-04-17

Family

ID=9262121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08225820A Expired GB2105906B (en) 1981-09-14 1982-09-10 Fusible transister prom

Country Status (4)

Country Link
JP (1) JPS5858756A (enrdf_load_stackoverflow)
DE (1) DE3232492A1 (enrdf_load_stackoverflow)
FR (1) FR2512999A1 (enrdf_load_stackoverflow)
GB (1) GB2105906B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2437107A (en) * 2006-04-13 2007-10-17 Sharp Kk Programmable read-only memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721964A (en) * 1970-02-18 1973-03-20 Hewlett Packard Co Integrated circuit read only memory bit organized in coincident select structure
JPS5119486A (enrdf_load_stackoverflow) * 1974-08-08 1976-02-16 Fujitsu Ltd
US3972754A (en) * 1975-05-30 1976-08-03 Ibm Corporation Method for forming dielectric isolation in integrated circuits
FR2369652A1 (fr) * 1976-10-29 1978-05-26 Radiotechnique Compelec Memoire morte programmable a transistors
JPS53143186A (en) * 1977-05-20 1978-12-13 Fujitsu Ltd Production of semiconductor device
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
JPS6032983B2 (ja) * 1977-09-12 1985-07-31 株式会社日立製作所 接合破壊型プログラマブルｒｏｍ
JPS5633875A (en) * 1979-08-28 1981-04-04 Sony Corp Manufacture of transistor

Also Published As

Publication number Publication date
FR2512999A1 (fr) 1983-03-18
FR2512999B1 (enrdf_load_stackoverflow) 1983-10-28
GB2105906A (en) 1983-03-30
JPS5858756A (ja) 1983-04-07
DE3232492A1 (de) 1983-04-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19920910