JPS5856435A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5856435A
JPS5856435A JP15517081A JP15517081A JPS5856435A JP S5856435 A JPS5856435 A JP S5856435A JP 15517081 A JP15517081 A JP 15517081A JP 15517081 A JP15517081 A JP 15517081A JP S5856435 A JPS5856435 A JP S5856435A
Authority
JP
Japan
Prior art keywords
film
recess
substrate
mask
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15517081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334657B2 (enExample
Inventor
Akira Kurosawa
黒沢　景
Sunao Shibata
直 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15517081A priority Critical patent/JPS5856435A/ja
Priority to US06/384,648 priority patent/US4472874A/en
Priority to DE8282105074T priority patent/DE3279916D1/de
Priority to EP82105074A priority patent/EP0067419B1/en
Priority to CA000404883A priority patent/CA1191280A/en
Publication of JPS5856435A publication Critical patent/JPS5856435A/ja
Publication of JPH0334657B2 publication Critical patent/JPH0334657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP15517081A 1981-06-10 1981-09-30 半導体装置の製造方法 Granted JPS5856435A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP15517081A JPS5856435A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法
US06/384,648 US4472874A (en) 1981-06-10 1982-06-03 Method of forming planar isolation regions having field inversion regions
DE8282105074T DE3279916D1 (en) 1981-06-10 1982-06-09 Method of manufacturing integrated circuit devices using dielectric isolation
EP82105074A EP0067419B1 (en) 1981-06-10 1982-06-09 Method of manufacturing integrated circuit devices using dielectric isolation
CA000404883A CA1191280A (en) 1981-06-10 1982-06-10 Method of forming plunar isolation regions having field inversion regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15517081A JPS5856435A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856435A true JPS5856435A (ja) 1983-04-04
JPH0334657B2 JPH0334657B2 (enExample) 1991-05-23

Family

ID=15600028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15517081A Granted JPS5856435A (ja) 1981-06-10 1981-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856435A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108538A (ja) * 1985-10-31 1987-05-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体集積回路構造体
JPH05146217A (ja) * 1992-05-20 1993-06-15 Iseki & Co Ltd コンバインにおける穀粒貯留装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423230A (en) * 1977-07-22 1979-02-21 Mitsubishi Rayon Eng Kk Controlling system of sulfur oxide discharge amount contained in the combustion gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423230A (en) * 1977-07-22 1979-02-21 Mitsubishi Rayon Eng Kk Controlling system of sulfur oxide discharge amount contained in the combustion gas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108538A (ja) * 1985-10-31 1987-05-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体集積回路構造体
JPH05146217A (ja) * 1992-05-20 1993-06-15 Iseki & Co Ltd コンバインにおける穀粒貯留装置

Also Published As

Publication number Publication date
JPH0334657B2 (enExample) 1991-05-23

Similar Documents

Publication Publication Date Title
US4663825A (en) Method of manufacturing semiconductor device
US20030143812A1 (en) Reduction of negative bias temperature instability in narrow width PMOS using F2 implanation
JPH0351108B2 (enExample)
US4728620A (en) Process for the production of a MIS-type integrated circuit
JPS5856435A (ja) 半導体装置の製造方法
JPH0334656B2 (enExample)
JPH0212960A (ja) 半導体装置の製造方法
JPH05291573A (ja) 半導体装置およびその製造方法
JPH0472770A (ja) 半導体装置の製造方法
JPH04132240A (ja) 半導体装置の製造方法
JPS5846647A (ja) 半導体装置の製造方法
JPH03191529A (ja) 半導体装置の製造方法
KR100261166B1 (ko) 반도체 소자의 제조 방법
JPS60134469A (ja) 半導体装置の製造方法
JPS6039868A (ja) 半導体装置の製造方法
JPH0372652A (ja) 半導体装置の製造方法
JPH0445979B2 (enExample)
JP3208952B2 (ja) 高耐圧トランジスタの製造方法
JPS5992549A (ja) 半導体装置の製造方法
JPH0744183B2 (ja) 半導体装置の製造方法
JPS6161548B2 (enExample)
JPS61256740A (ja) 半導体装置の製造方法
JPH04368171A (ja) Ｂｉ−ＣＭＯＳ集積回路の製造方法
JPS60148142A (ja) 半導体装置の製造方法
JPS58175843A (ja) 半導体集積回路の製造方法