JPS5852827A - ドライエツチング方法および装置 - Google Patents

ドライエツチング方法および装置

Info

Publication number
JPS5852827A
JPS5852827A JP15061881A JP15061881A JPS5852827A JP S5852827 A JPS5852827 A JP S5852827A JP 15061881 A JP15061881 A JP 15061881A JP 15061881 A JP15061881 A JP 15061881A JP S5852827 A JPS5852827 A JP S5852827A
Authority
JP
Japan
Prior art keywords
dry etching
reaction tank
photoresist
gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15061881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0429220B2 (enrdf_load_stackoverflow
Inventor
Yoshimichi Hirobe
広部　嘉道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15061881A priority Critical patent/JPS5852827A/ja
Publication of JPS5852827A publication Critical patent/JPS5852827A/ja
Publication of JPH0429220B2 publication Critical patent/JPH0429220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
JP15061881A 1981-09-25 1981-09-25 ドライエツチング方法および装置 Granted JPS5852827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15061881A JPS5852827A (ja) 1981-09-25 1981-09-25 ドライエツチング方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15061881A JPS5852827A (ja) 1981-09-25 1981-09-25 ドライエツチング方法および装置

Publications (2)

Publication Number Publication Date
JPS5852827A true JPS5852827A (ja) 1983-03-29
JPH0429220B2 JPH0429220B2 (enrdf_load_stackoverflow) 1992-05-18

Family

ID=15500802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15061881A Granted JPS5852827A (ja) 1981-09-25 1981-09-25 ドライエツチング方法および装置

Country Status (1)

Country Link
JP (1) JPS5852827A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057937A (ja) * 1983-09-09 1985-04-03 Ushio Inc 紫外線洗浄方法
JPS6048236U (ja) * 1983-09-09 1985-04-04 ウシオ電機株式会社 紫外線洗浄装置の開閉扉
JPS6048237U (ja) * 1983-09-09 1985-04-04 ウシオ電機株式会社 紫外線洗浄装置
JPS62273732A (ja) * 1986-05-21 1987-11-27 Toshiba Corp 光励起ガス処理装置
US6350391B1 (en) 1995-11-09 2002-02-26 Oramir Semiconductor Equipment Ltd. Laser stripping improvement by modified gas composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149643A (en) * 1979-05-07 1980-11-21 Perkin Elmer Corp Method and device for chemically treating material to be treated
JPS56105480A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Plasma etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149643A (en) * 1979-05-07 1980-11-21 Perkin Elmer Corp Method and device for chemically treating material to be treated
JPS56105480A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Plasma etching method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057937A (ja) * 1983-09-09 1985-04-03 Ushio Inc 紫外線洗浄方法
JPS6048236U (ja) * 1983-09-09 1985-04-04 ウシオ電機株式会社 紫外線洗浄装置の開閉扉
JPS6048237U (ja) * 1983-09-09 1985-04-04 ウシオ電機株式会社 紫外線洗浄装置
JPS62273732A (ja) * 1986-05-21 1987-11-27 Toshiba Corp 光励起ガス処理装置
US6350391B1 (en) 1995-11-09 2002-02-26 Oramir Semiconductor Equipment Ltd. Laser stripping improvement by modified gas composition

Also Published As

Publication number Publication date
JPH0429220B2 (enrdf_load_stackoverflow) 1992-05-18

Similar Documents

Publication Publication Date Title
JP2001118818A (ja) 紫外線処理装置及び紫外線処理方法
Yu et al. Photodissociation dynamics of cadmium and zinc dimethyl
JPS5852827A (ja) ドライエツチング方法および装置
JPS5933830A (ja) ドライエツチング方法
Baun ISS/SIMS characterization of UV/O3 cleaned surfaces
JPS6113634A (ja) プラズマ処理装置
JPS5986222A (ja) ドライエツチング方法
JPH07169743A (ja) 表面処理方法
JPH03125428A (ja) 半導体基板洗浄装置
JP3034259B2 (ja) 有機化合物膜の除去方法
JPH0574714A (ja) 半導体処理方法及びその装置
JP2968138B2 (ja) ドライエッチング方法
JPH0586648B2 (enrdf_load_stackoverflow)
JPS6043487A (ja) 薄膜の形成方法および形成装置
JP2615070B2 (ja) エツチング方法
JPH0685082B2 (ja) レジスト処理方法
JPS6236668A (ja) アツシング方法
JPH01189123A (ja) 高分子樹脂被膜の除去方法
JPS63128537A (ja) Ｘ線源
JPH0388328A (ja) レジストアッシング方法
JP2709058B2 (ja) 光ドライエツチング装置及び方法
JPS63234529A (ja) レジスト処理方法
JPH08316540A (ja) 薄膜作製法及び薄膜作製装置
JP2000100800A (ja) 有機化合物膜の除去方法
JPH0727887B2 (ja) 有機物の灰化方法